FDS6694

Single FETs, MOSFETs Overview

The FDS6694 is a 30V N-Channel Fast Switching PowerTrench MOSFET designed to improve DC/DC converter efficiency. It features low gate charge and optimized RDS(ON). Key parameters include: Drain-Source Voltage (VDSS) of 30 V; Continuous Drain Current (ID) of 12 A; Gate Threshold Voltage (VGS(th)) of 1 to 3 V; RDS(ON) of 11 mΩ at VGS=10V and 13.5 mΩ at VGS=4.5V; Total Gate Charge (Qg) of 13 nC typical; Input Capacitance (Ciss) of 1293 pF; Turn-On Delay Time (td(on)) of 9 ns; Turn-Off Delay Time (td(off)) of 28 ns; Reverse Recovery Time (trr) of 29 ns; Operating Temperature Range of -55°C to +175°C; Package SO-8.

Single FETs, MOSFETs Feature Summary

• Optimized for low gate charge and fast switching speed to enhance power conversion efficiency in synchronous or conventional PWM controllers.
• Utilizes high-performance trench technology to achieve extremely low on-resistance across various gate drive voltages.
• Designed with high power and current handling capabilities suitable for demanding load switch applications.

Single FETs, MOSFETs Applications

• DC/DC converters
• Power management systems
• Load switches

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm the specific revision code matches the required datasheet version. Ensure the package marking corresponds to the ordered quantity and reel specifications. Check RoHS compliance status if environmental regulations apply to the end product.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V logic-level N-channel MOSFET with low gate charge is required for high-frequency switching. The SO-8 package provides a balance between thermal performance and board space. Consider the junction-to-ambient thermal resistance based on the copper pad area used in the PCB layout to ensure safe operating temperatures under continuous load.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench family of MOSFETs from Fairchild Semiconductor, now part of onsemi. It is specifically engineered for synchronous rectification and general switching applications where minimizing conduction and switching losses is critical. The SO-8 surface-mount package facilitates automated assembly in compact power supply designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include the FDS6690S and FDS6694A. Verify pinout compatibility and electrical parameter tolerances before substitution. Cross-reference with other 30V N-Channel SO-8 MOSFETs ensuring similar RDS(ON) and Qg values are maintained for equivalent circuit performance.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current capability?

The absolute maximum rating for pulsed drain current is 50 A.

How does the on-resistance vary with temperature?

The on-resistance increases with junction temperature. At 125°C, the maximum RDS(ON) rises to 15 mΩ at VGS=10V compared to 11 mΩ at 25°C.

What is the reverse recovery time of the internal body diode?

The diode reverse recovery time (trr) is specified as 29 ns under test conditions of IF = 12 A and diF/dt = 100 A/µs.