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FDS6898AZ-F085 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 9.4A 8SOIC. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDS6898AZ-F085
- Description：MOSFET 2N-CH 20V 9.4A 8SOIC
- Series：*
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDS6898AZ-F085
FET, MOSFET Arrays Overview
The FDS6898AZ-F085 is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It features a SOIC-8 surface-mount package and operates with a drain-source voltage of 20 V. The device supports a continuous drain current of 9.4 A and maintains a low on-resistance of 14 mΩ. Key electrical parameters include a gate charge of 23 nC, a threshold voltage of 500 mV, and power dissipation of 2 W. It functions within a temperature range of -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration in a compact SOIC-8 package
- Low on-resistance for efficient power switching
- Enhanced mode operation with defined threshold characteristics
FET, MOSFET Arrays Applications
- DC-DC converter synchronous rectification
- Load switching applications
- Power management circuits
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix F085 against official manufacturer documentation to confirm packaging details such as tape and reel specifications. Ensure component authenticity through authorized distribution channels and cross-reference datasheet revisions for accurate technical compliance.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring dual N-channel isolation in an 8-pin footprint. Evaluate thermal performance based on the 2 W power dissipation limit and ensure gate drive voltages remain within the specified ±12 V range for optimal switching efficiency.
FET, MOSFET Arrays Part Context
This part belongs to the PowerTrench series from onsemi, designed for general-purpose power switching. It serves as a dual-channel solution compared to single-channel alternatives, offering space savings in dense PCB layouts while maintaining standard logic-level compatibility.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution guides for compatible dual N-channel MOSFETs in SOIC-8 packages. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative components.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
