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FDS6900AS-G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDS6900AS-G
- Description：MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
- Series：PowerTrench®, SyncFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.9A, 8.2A
- Rds On (Max) @ Id, Vgs：27mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA, 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 15V
- Power - Max：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDS6900AS-G
FET, MOSFET Arrays Overview
The FDS6900AS-G is a dual N-channel enhancement mode field effect transistor manufactured by onsemi. This component integrates two independent MOSFETs within a single surface-mount package, designed for high-speed switching applications. It features low on-resistance and fast switching characteristics suitable for power management circuits. The device utilizes advanced trench technology to achieve efficient performance in compact form factors.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- Enhancement mode operation for standard logic control compatibility
- Advanced trench technology for optimized switching performance
FET, MOSFET Arrays Applications
- DC-DC converter synchronous rectification
- Power management integrated circuits
- Load switch applications
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix 'G' indicates lead-free compliance per RoHS standards. Confirm the package marking matches the official datasheet specifications. Ensure the supplier provides valid traceability documentation. Check for any regional regulatory restrictions applicable to the destination market before finalizing procurement orders.
FET, MOSFET Arrays Selection Notes
Evaluate the maximum drain-source voltage and continuous drain current requirements against the application load conditions. Consider the thermal resistance characteristics for adequate heat dissipation in the intended enclosure. Verify gate charge parameters for driving capability compatibility with the control logic interface.
FET, MOSFET Arrays Part Context
This component belongs to onsemi's portfolio of discrete power semiconductors. It is part of a series of dual MOSFET solutions designed to reduce board space and simplify assembly processes. The product line targets consumer electronics and industrial power supply markets requiring reliable switching elements.
FET, MOSFET Arrays Replacement Considerations
Consult the manufacturer's cross-reference guide for verified equivalent parts. Ensure substitute components match the pinout configuration and electrical ratings exactly. Validate thermal performance and package dimensions for mechanical fit during replacement procedures.
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