FDS6910-Z

FET, MOSFET Arrays Overview

The FDS6910-Z is a dual N-channel logic-level PowerTrench MOSFET manufactured by onsemi. It features a SOIC-8 surface-mount package and utilizes silicon technology. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V, a continuous drain current (Id) of 7.5 A, and a maximum gate-source voltage (Vgs) of ±20 V. The device exhibits a low on-resistance (Rds(on)) of 10.6 mΩ at standard test conditions, with a gate charge (Qg) of 24 nC. It operates within a temperature range of -55°C to +150°C junction temperature and has a power dissipation rating of 1.6 W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for space-efficient circuit designs
• Logic-level gate drive capability for direct microcontroller interfacing
• Low on-resistance for improved efficiency in power switching applications

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification
• Load switching in portable electronics
• Power management circuits requiring low voltage control

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or the manufacturer directly. Check for obsolescence status as indicated in official documentation. Ensure compliance with RoHS directives if required for specific regional regulations. Confirm package integrity upon receipt to prevent damage during handling.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with 30 V rating and logic-level compatibility is required. Consider the SOIC-8 package constraints for PCB layout. Evaluate thermal performance based on the 1.6 W power dissipation limit and ambient operating conditions. Verify that the 7.5 A current rating meets the application's peak and continuous load requirements.

FET, MOSFET Arrays Part Context

The FDS6910 belongs to onsemi’s PowerTrench series, designed for high-efficiency power switching. This specific part number represents a dual-channel variant optimized for low-voltage applications. The 'Z' suffix typically denotes specific tape and reel packaging or compliance variations, though functional specifications remain consistent with the base FDS6910 model.

FET, MOSFET Arrays Replacement Considerations

Consult onsemi datasheets for pin-compatible alternatives within the PowerTrench family. Verify that any substitute matches the 30 V Vds, 7.5 A Id, and SOIC-8 package dimensions. Ensure equivalent Rds(on) and Qg values to maintain circuit performance.