FDS6910

FET, MOSFET Arrays Overview

The FDS6910 is a dual N-channel enhancement mode field effect transistor manufactured by onsemi. It is housed in an 8-lead Small Outline Integrated Circuit (SOIC) package with an exposed thermal pad, designated as R-PDSO-G8. The device features a drain-source breakdown voltage of 20 V and supports a continuous drain current of 7.5 A. Key electrical characteristics include a maximum drain-source on-resistance of 0.013 Ω at a gate-source voltage of 10 V. The component integrates two separate elements with built-in diodes within a single package.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration providing two independent switching channels in a compact footprint
• Integrated body diodes for synchronous rectification or freewheeling applications
• Low on-resistance design to minimize conduction losses and improve power efficiency
• Exposed thermal pad architecture to facilitate heat dissipation from the substrate

FET, MOSFET Arrays Applications

• Point-of-load (POL) converters in desktop computers and servers
• Power stages for graphics cards and gaming consoles
• Set-top box power management circuits
• Synchronous rectification in low-voltage DC/DC conversion systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and lead finish specifications. Ensure that the procurement source provides documentation confirming compliance with RoHS directives and halogen-free status. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing acquisition.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring a 20 V rating with high current handling capabilities up to 7.5 A. The low on-resistance makes it suitable for applications prioritizing thermal performance and efficiency. Consider the SOIC-8 package constraints regarding PCB copper area requirements for adequate heat sinking through the exposed pad. Evaluate gate drive voltage levels to ensure optimal R_DS(on) performance during operation.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET Power MOSFET family from onsemi, designed specifically for low-voltage power switching applications. It is engineered to replace older discrete solutions by integrating dual channels into a single surface-mount package. The series targets high-density power designs where space savings and thermal management are critical constraints for system miniaturization.

FET, MOSFET Arrays Replacement Considerations

The IRF8910GTRPBF is a confirmed substitute offering identical 20 V / 10 A ratings and 0.0134 Ω on-resistance in the same SOIC-8 package. Verify pinout alignment and thermal pad connectivity when transitioning between these specific part numbers.