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FDS6912 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is POWER FIELD-EFFECT TRANSISTOR, 6. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDS6912
- Description：POWER FIELD-EFFECT TRANSISTOR, 6
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDS6912
FET, MOSFET Arrays Overview
The FDS6912 is a dual N-channel PowerTrench MOSFET designed for logic-level PWM applications. It features a 30V drain-source breakdown voltage and a continuous drain current of 6A. The device offers a low on-resistance of 28mΩ at VGS=10V and 42mΩ at VGS=4.5V. With a gate charge of 8.1nC, it enables faster switching and improved efficiency in DC/DC converters. Operating within a temperature range of -55°C to +150°C, it utilizes an SOIC-8 surface-mount package.
FET, MOSFET Arrays Feature Summary
- Logic-level optimized for direct drive from standard logic controllers
- Enhanced switching performance with reduced gate charge compared to comparable devices
- Dual configuration supporting synchronous or conventional PWM controller topologies
FET, MOSFET Arrays Applications
- Synchronous rectification in DC/DC converters
- Conventional switching PWM power supply designs
- Low voltage load switching applications
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official datasheets. Check manufacturing lifecycle status as end-of-life indicators may affect long-term availability. Validate package markings against original manufacturer specifications to ensure part integrity.
FET, MOSFET Arrays Selection Notes
Select this component for low-voltage, high-efficiency power conversion where logic-level drive compatibility is required. Ensure the operating voltage remains below the 30V limit. Consider thermal management due to the small SOIC-8 package size when designing for continuous 6A loads.
FET, MOSFET Arrays Part Context
Part of the PowerTrench family, the FDS6912 targets efficiency improvements in portable and industrial power supplies. It serves as a discrete solution for replacing integrated power stages in cost-sensitive designs requiring dual N-channel functionality without complex driver integration.
FET, MOSFET Arrays Replacement Considerations
Cross-reference with other dual N-channel MOSFETs in the SOIC-8 package offering similar RDS(ON) and VGS thresholds. Verify pinout compatibility before substitution. Evaluate thermal resistance differences if replacing with higher-power variants.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
