FDS6961A_F011

FET, MOSFET Arrays Overview

The FDS6961A is a dual N-channel Logic Level PowerTrench MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 30 V and continuous drain current of 3.5 A at 25°C. The device exhibits low on-state resistance, specified as 0.090 Ω at VGS = 10 V and 0.140 Ω at VGS = 4.5 V. Key electrical parameters include a gate threshold voltage range of 1 to 3 V and a typical total gate charge of 2.1 nC. Thermal characteristics define junction-to-ambient resistance at 78 °C/W under standard mounting conditions. The component operates within a temperature range of -55 to 150 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration utilizing advanced PowerTrench process technology for minimized on-state resistance.
• Logic level compatibility enabling direct drive from standard logic interfaces with low gate charge requirements.
• High power handling capability supported by robust thermal design and fast switching performance.

FET, MOSFET Arrays Applications

• Low voltage battery powered applications requiring efficient power management.
• In-line power loss reduction in portable electronic devices.
• Fast switching circuits where high efficiency is critical.

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the datasheet revision date with your procurement records to guarantee access to the most current electrical and thermal parameters.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits that require dual N-channel MOSFETs with low on-resistance at logic-level gate voltages. Evaluate the thermal resistance values against your printed circuit board copper area to ensure adequate heat dissipation. Confirm that the 30 V breakdown voltage provides sufficient margin for your specific operating voltage levels.

FET, MOSFET Arrays Part Context

This device belongs to the Fairchild Semiconductor (now onsemi) PowerTrench family of logic level MOSFETs. It is designed to offer superior switching performance compared to standard planar technologies. The dual configuration allows for compact implementation in bridge or push-pull topologies.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Verify pinout compatibility and electrical parameter equivalence before substitution.

FET, MOSFET Arrays FAQ

What is the typical total gate charge for the FDS6961A?

The typical total gate charge is 2.1 nC at VDS = 15 V and ID = 3.5 A.

How does the on-resistance vary with temperature?

The on-resistance increases with junction temperature; it rises from a maximum of 0.090 Ω at 25°C to 0.155 Ω at 125°C at VGS = 10 V.

What is the maximum continuous drain current rating?

The maximum continuous drain current is rated at 3.5 A at an ambient temperature of 25°C.