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FDS6990A is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 7.5A 8SOIC. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDS6990A
- Description：MOSFET 2N-CH 30V 7.5A 8SOIC
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7.5A
- Rds On (Max) @ Id, Vgs：18mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1235pF @ 15V
- Power - Max：900mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDS6990A
FET, MOSFET Arrays Overview
The FDS6990A is a dual N-channel logic-level PowerTrench MOSFET manufactured by onsemi. It features a 30V drain-source breakdown voltage and supports continuous drain currents of up to 7.5A. The device offers low on-resistance, specified at 22mΩ at VGS=10V and 30mΩ at VGS=4.5V. Designed for synchronous DC/DC power supplies, it utilizes high-performance trench technology to maximize efficiency. The component operates within a temperature range of -55°C to +150°C junction temperature.
FET, MOSFET Arrays Feature Summary
- Dual N-Channel Logic-Level Configuration
- High-Performance Trench Technology
- Optimized for Synchronous Rectification
FET, MOSFET Arrays Applications
- Synchronous DC/DC Power Supplies
- Low-Side Switch Applications
- Power Conversion Systems
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix 'A' against the manufacturer's current datasheet to confirm exact electrical tolerances and package variations. Ensure compatibility with existing PCB footprints for SO-8 packages. Confirm RoHS compliance status through official documentation before finalizing procurement plans.
FET, MOSFET Arrays Selection Notes
Select this component when designing synchronous rectifier circuits requiring dual N-channel MOSFETs in a compact SO-8 package. The logic-level gate drive capability makes it suitable for applications driven by standard logic voltages. Evaluate thermal management requirements based on the specified power dissipation limits.
FET, MOSFET Arrays Part Context
This part belongs to the PowerTrench SyncFET family from onsemi (formerly Fairchild Semiconductor). It serves as an integrated solution designed to replace discrete MOSFET and Schottky diode combinations in synchronous buck converters, simplifying board layout while maintaining high efficiency.
FET, MOSFET Arrays Replacement Considerations
The FDS6990AS is a related variant that includes integrated Schottky diodes. Verify if the additional diode functionality is required or if the discrete diode approach of the FDS6990A is preferred for the specific circuit design.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
