FDS6990AS

FET, MOSFET Arrays Overview

The onsemi FDS6990AS is a dual N-channel PowerTrench SyncFET MOSFET housed in an SOIC-8 surface-mount package. It features a 30V drain-source breakdown voltage and supports a continuous drain current of 7.5A. The device exhibits a maximum on-resistance of 17 milliohms at room temperature, with a gate threshold voltage of 1V and total gate charge of 14nC. Operating within a temperature range of -55°C to +150°C, it dissipates up to 2W of power. Switching characteristics include rise and fall times of 5ns and 8ns respectively, alongside a minimum forward transconductance of 29S.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single compact SOIC-8 package for space-constrained designs.
• PowerTrench SyncFET technology optimized for low conduction losses and high efficiency.
• Enhancement mode operation with robust thermal stability across extended industrial temperature ranges.

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification stages
• Low-voltage load switch implementations
• Battery protection circuits

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels due to end-of-life status. Request manufacturer certificates of conformity and material composition declarations to ensure RoHS compliance. Validate lot traceability against the official datasheet specifications before integration into production schedules.

FET, MOSFET Arrays Selection Notes

Evaluate thermal management requirements carefully as the device operates within a 2W power dissipation limit in an SOIC-8 footprint. Confirm that the 30V voltage rating provides adequate headroom for the specific application rail. Ensure gate drive signals remain within the specified ±20V limits to prevent dielectric breakdown.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's PowerTrench SyncFET family, designed specifically for synchronous rectification applications. It replaces discrete MOSFET pairs by integrating two matched N-channel devices, reducing board space and parasitic inductance compared to separate components.

FET, MOSFET Arrays Replacement Considerations

Check for active equivalents from the same series or other manufacturers offering identical pinouts and electrical parameters. Verify that any substitute maintains the same SOIC-8 package dimensions and thermal characteristics to ensure mechanical compatibility.