FDS6993

FET, MOSFET Arrays Overview

The FDS6993 is a dual P-channel PowerTrench MOSFET array manufactured by Fairchild Semiconductor. It features a 30V drain-source voltage rating and operates with continuous drain currents of 4.3A and 6.8A at 25°C. The device exhibits a maximum on-resistance of 55 milliohms at 10V gate drive. Key electrical characteristics include a gate charge of 7.7nC and an input capacitance of 530pF. Designed for surface mount applications, it utilizes an 8-SOIC package and supports junction temperatures up to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration integrated into a single compact package
• Logic level gate compatibility for direct interface with standard logic circuits
• PowerTrench technology optimized for low on-resistance performance

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification stages
• Low-side and high-side power switching in portable devices
• Load switch applications requiring dual channel control

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or original manufacturer channels due to obsolete status. Confirm RoHS compliance specifications match current regulatory requirements. Validate datasheet revisions against specific production batches to ensure parameter consistency. Request detailed traceability documentation for quality assurance purposes prior to final procurement decisions.

FET, MOSFET Arrays Selection Notes

Evaluate thermal management requirements based on the 900mW maximum power dissipation limit within the 8-SOIC footprint. Compare gate charge specifications against driving circuit capabilities to optimize switching speeds. Assess on-resistance values under actual operating conditions rather than nominal ratings. Ensure voltage ratings accommodate peak transient loads present in the target application environment.

FET, MOSFET Arrays Part Context

This component belongs to the Fairchild PowerTrench series, representing a generation of silicon gate field-effect transistors designed for efficient power management. The FDS6993 specifically addresses the need for compact dual-channel solutions in space-constrained electronic designs. Its integration reduces board space compared to discrete implementations while maintaining robust switching characteristics.

FET, MOSFET Arrays Replacement Considerations

Consult official replacement guides for equivalent dual P-channel MOSFETs in SO-8 packages. Verify pinout compatibility and electrical parameters before substitution. Consider updated series components from the same manufacturer family if available.