FDS6994S

FET, MOSFET Arrays Overview

The FDS6994S is a dual N-channel enhancement mode MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It features a 30V drain-source breakdown voltage and supports a continuous drain current of 6.9A. The device utilizes an SO-8 surface-mount package with a low on-resistance of 15mΩ. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to +150°C. This component belongs to the PowerTrench SyncFET series, offering optimized gate charge characteristics for improved performance in synchronous rectification circuits.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single compact package
• Low on-resistance for efficient power handling in synchronous applications
• Enhanced mode operation suitable for logic-level control interfaces

FET, MOSFET Arrays Applications

• Synchronous rectification in DC-DC converters
• Low voltage power management systems
• Battery protection circuits

FET, MOSFET Arrays Part Context

The FDS6994S originates from Fairchild Semiconductor's product line prior to its integration into onsemi. During this transition, certain Fairchild orderable part numbers required modification to align with onsemi's system requirements and nomenclature standards. This historical context explains the specific designation and its place within the broader portfolio of low-voltage MOSFET solutions offered by the manufacturer.

FET, MOSFET Arrays Replacement Considerations

Verify compatibility with equivalent dual N-channel MOSFETs such as the FDS6990AS, noting differences in channel count specifications and package variants. Ensure that any substitute maintains the required 30V rating and SO-8 footprint while confirming updated manufacturer documentation for electrical parameter alignment.