FDS8858CZ

FET, MOSFET Arrays Overview

The FDS8858CZ is a dual N/P-channel MOSFET array from onsemi's PowerTrench series, housed in an 8-SOIC surface-mount package. It features a 30V drain-source voltage rating and continuous drain currents of 8.6A for the N-channel and 7.3A for the P-channel at 25°C. The device exhibits a maximum on-resistance of 17mΩ @ 10V for the N-channel and supports logic-level gate drive with a threshold voltage of 3V max. Key electrical parameters include a maximum gate charge of 24nC at 10V and input capacitance of 1205pF at 15V. With a power dissipation of 900mW and an operating junction temperature range of -55°C to 150°C, it is designed for efficient switching applications.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating both N-channel and P-channel MOSFETs in a single compact package
• Logic-level gate drive capability enabling direct interface with standard digital control signals
• Low on-resistance characteristics optimized for high-efficiency power switching performance

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification stages
• Motor driver output stages requiring complementary switching
• Power management circuits in portable electronic devices

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number FDS8858CZ with official onsemi documentation. Confirm RoHS compliance status and check for recent Product Change Notifications (PCN) regarding packaging or wafer fab changes. Ensure the received components match the specified 8-SOIC package dimensions and pinout configuration before integration into production assemblies.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual MOSFET solution is required for low-voltage switching applications. The 8-SOIC package offers space efficiency compared to discrete arrangements. Consider the 30V voltage rating and thermal limitations of the SOIC package for power dissipation requirements. Verify that the logic-level gate drive specifications align with the system's control voltage levels for reliable operation.

FET, MOSFET Arrays Part Context

The FDS8858CZ belongs to onsemi's PowerTrench family, which focuses on low on-resistance MOSFET technologies. This specific model integrates complementary N and P channels to simplify circuit design for half-bridge or synchronous rectifier topologies. The 8-SOIC package provides a balance between thermal performance and board space constraints for consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Consult official onsemi substitution guides for verified alternatives. No public substitute part numbers are confirmed in the provided data.