FDS89141

FET, MOSFET Arrays Overview

The FDS89141 is a dual N-channel PowerTrench MOSFET from onsemi, housed in an SOIC-8 surface-mount package. It features a drain-source breakdown voltage of 100 V and a continuous drain current rating of 3.5 A per channel. The device exhibits a maximum on-resistance of 62 mΩ at room temperature. It operates with a gate-source voltage range up to 20 V and has a threshold voltage of 2 V. The total gate charge is 7.1 nC. Thermal performance includes a power dissipation capacity of 31 W, with an operating temperature range spanning from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact SOIC-8 package for space-constrained designs
• Shielded Gate PowerTrench technology ensures low on-resistance and high switching efficiency
• Enhanced thermal stability supporting operation across wide industrial temperature ranges

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring dual synchronous rectification
• Motor control applications utilizing half-bridge configurations
• Power management systems needing isolated high-side and low-side switching

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer part number against official onsemi documentation to confirm authenticity. Ensure the component matches the specified SOIC-8 package and electrical ratings. Check for any specific ordering suffixes that may indicate tape-and-reel packaging or environmental compliance variations. Confirm availability through authorized distributors to avoid counterfeit risks.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required for 100V applications. Consider the 62 mΩ on-resistance for efficiency requirements and the 3.5A current rating for load handling. The SOIC-8 package suits PCB layouts where dual independent channels are necessary. Evaluate thermal constraints given the 31W dissipation rating and junction temperature limits.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family of MOSFETs, known for optimized trench gate technology. It serves as a dual-channel variant suitable for applications requiring two independent N-channel switches in a single package. The product line emphasizes low RDS(on) and robust switching performance for modern power electronics.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and electrical parameters such as VDS, ID, and RDS(on) before substitution. Ensure thermal characteristics and package dimensions match the original design requirements.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage for the FDS89141?

The maximum gate-source voltage is 20 V.

Does the FDS89141 support negative operating temperatures?

Yes, the minimum operating temperature is -55°C.