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FDS8926 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET 2N-CH 30V 5.5A 8-SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDS8926
- Description：MOSFET 2N-CH 30V 5.5A 8-SO
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDS8926
FET, MOSFET Arrays Overview
The FDS8926AL99Z is a dual N-channel Power MOSFET from Fairchild Semiconductor's PowerTrench series, housed in an SO-8 package. It features a drain-source voltage rating of 30V and a continuous drain current of 5.5A. The device exhibits a maximum on-resistance of 0.03 ohms. Designed for enhancement mode operation, it integrates built-in diodes within its two-element configuration. The component supports junction temperatures up to 150°C and utilizes silicon metal-oxide semiconductor technology.
FET, MOSFET Arrays Feature Summary
- Dual N-channel architecture with integrated body diodes
- Low on-resistance for efficient power switching
- Enhancement mode operation for logic-level control
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix (e.g., AL99Z) against official manufacturer documentation to confirm exact packaging and compliance status. Ensure the source document explicitly identifies Fairchild Semiconductor as the original manufacturer or ON Semiconductor as the successor entity. Cross-reference datasheet revisions to validate electrical parameters before integration into designs.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel configuration with low Rds(on) is required in an SO-8 footprint. Evaluate thermal performance based on the specified 0.03 ohm resistance at the target operating current. Confirm that the 30V breakdown voltage aligns with the system's supply requirements and transient conditions.
FET, MOSFET Arrays Part Context
This part belongs to the PowerTrench family of discrete semiconductors designed for high-efficiency switching applications. Fairchild Semiconductor developed this series to provide robust performance in compact surface-mount packages. The product line emphasizes low conduction losses and reliable operation in power management environments.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution guides for verified equivalents. Generic cross-references may not match the specific 0.03 ohm resistance or 5.5A current rating documented for this part number.
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