FDS8926A

$1.77

Description：MOSFET 2N-CH 30V 5.5A 8SOIC
Series：-

SKU:56460040fc7f Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

FDS8926A is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 5.5A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS8926A

Description：MOSFET 2N-CH 30V 5.5A 8SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.5A
Rds On (Max) @ Id, Vgs：30mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：900pF @ 10V
Power - Max：900mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDS8926A

FDS8926A

FET, MOSFET Arrays Overview

The FDS8926A is a dual N-channel enhancement mode field effect transistor manufactured by onsemi. It features a 30 V drain-source voltage rating and a continuous drain current of 5.5 A. The device offers an on-resistance of 0.03 Ω at VGS = 4.5 V and 5.5 A, or 0.038 Ω at VGS = 2.5 V and 4.5 A. It operates within a temperature range of -55 °C to +150 °C and dissipates up to 2 W in dual operation. Packaged in SO-8, it includes internal body diodes.

FET, MOSFET Arrays Feature Summary

Dual MOSFET configuration in a surface mount package
High density cell design for extremely low RDS(ON)
Low gate threshold fully enhanced at 2.5V

FET, MOSFET Arrays Applications

Disk drive motor control
Battery powered circuits

FET, MOSFET Arrays Procurement Notes

Verify the component status as obsolete with Fairchild Semiconductor before procurement planning. Confirm that the manufacturer designation has transitioned to onsemi. Ensure compatibility with legacy designs referencing the original Fairchild part number. Check for RoHS compliance details through official channels.

FET, MOSFET Arrays Selection Notes

Select this component for low voltage applications requiring fast switching and low in-line power loss. Verify thermal resistance requirements against board design constraints. Ensure gate drive voltages align with the specified thresholds for optimal performance.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench series of N-channel enhancement mode power field effect transistors. Produced using high cell density DMOS technology, it is designed for superior switching performance. The product line emphasizes minimized on-state resistance for efficient power handling.