FET, MOSFET Arrays FDS8934A product image

FDS8934A

$0.52
  • Description:MOSFET 2P-CH 20V 4A 8SOIC
  • Series:-

SKU:0a78b226b188 Category: Brand:

  
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FDS8934A is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 4A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS8934A

  • Description:MOSFET 2P-CH 20V 4A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4A
  • Rds On (Max) @ Id, Vgs:55mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:28nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:1130pF @ 10V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS8934A

FDS8934A

FET, MOSFET Arrays Overview

The FDS8934A is a dual P-Channel Enhancement Mode Field Effect Transistor manufactured by onsemi. It features a maximum drain-source voltage of -20 V and continuous drain current of -4 A. The device exhibits an on-resistance of 0.055 Ω at VGS = -4.5 V and -4 A, and 0.072 Ω at VGS = -2.5 V and -3.4 A. Operating temperature ranges from -55°C to 150°C. Thermal resistance junction-to-ambient is 78 °C/W under standard conditions. Total gate charge is typically 20 nC at VDS = -5 V and ID = -4 A.

FET, MOSFET Arrays Feature Summary

  • Dual MOSFET configuration in a surface mount package for high-density applications
  • High cell density DMOS technology minimizes on-state resistance
  • Optimized for low voltage power management and battery-powered circuits

FET, MOSFET Arrays Applications

  • Notebook computer power management
  • Battery powered circuits requiring fast switching
  • Low in-line power loss applications

FET, MOSFET Arrays Procurement Notes

Verify the specific revision status as the component may be obsolete. Confirm thermal pad requirements for accurate heat dissipation calculations. Ensure compatibility with existing PCB footprints for SO-8 or SuperSOT packages. Check for lead-free compliance if required by local regulations. Validate sourcing channels for genuine Fairchild Semiconductor products.

FET, MOSFET Arrays Selection Notes

Select this component for dual-channel low-side switching where space is limited. Consider the -20 V rating for appropriate voltage headroom. Evaluate thermal performance based on actual board copper area. Compare gate charge requirements against driver capabilities. Verify operating temperature range meets system environmental constraints.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of power MOSFETs. It utilizes proprietary high cell density DMOS technology. The dual configuration allows for efficient bridge or half-bridge implementations. It is designed for applications prioritizing low RDS(ON) and fast switching speeds.

FET, MOSFET Arrays Replacement Considerations

Check for equivalent dual P-Channel MOSFETs with similar -20 V ratings. Verify pinout compatibility for SO-8 packages. Ensure on-resistance and thermal characteristics meet or exceed original specifications. Confirm package dimensions match existing board layouts.

FDS8934AFDS8934A
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