FET, MOSFET Arrays FDS8949-F085 product image

FDS8949-F085

$1.33
  • Description:MOSFET 2N-CH 40V 6A 8SOIC
  • Series:PowerTrench®

SKU:bf0717f1600b Category: Brand:

  
  • Quantity
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FDS8949-F085 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 40V 6A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS8949-F085

  • Description:MOSFET 2N-CH 40V 6A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:6A
  • Rds On (Max) @ Id, Vgs:29mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:955pF @ 20V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for FDS8949-F085

FDS8949-F085

FET, MOSFET Arrays Overview

The onsemi FDS8949-F085 is a dual N-Channel Logic Level PowerTrench MOSFET designed for low voltage and battery-powered applications. It utilizes an advanced trench process to minimize on-state resistance while maintaining superior switching performance. Key electrical parameters include a maximum rDS(on) of 29mΩ at VGS = 10V and 36mΩ at VGS = 4.5V. The device features low gate charge for efficient operation and high power handling capability. It is qualified to AEC-Q101 standards, ensuring reliability in automotive environments, and is RoHS compliant.

FET, MOSFET Arrays Feature Summary

  • Advanced PowerTrench process minimizes on-state resistance for low in-line power loss
  • Logic level gate drive compatibility with low threshold voltage requirements
  • AEC-Q101 qualification ensures robustness for automotive electronic applications
  • Dual channel configuration integrates two N-Channel MOSFETs in a single package

FET, MOSFET Arrays Applications

  • Inverter circuits requiring efficient power switching
  • Power supply modules needing compact dual-channel solutions
  • Battery-powered devices where low standby current and efficiency are critical

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix -F085 against the official datasheet to confirm packaging and tape-and-reel specifications. Confirm AEC-Q101 automotive qualification status if required for your application. Check for end-of-life notices as Fairchild Semiconductor products may have transitioned statuses under onsemi. Ensure RoHS compliance documentation is available for regulatory adherence.

FET, MOSFET Arrays Selection Notes

Select this component when dual N-Channel logic-level MOSFETs are needed for low-voltage switching. Compare rDS(on) values at 4.5V and 10V VGS against system drive voltages. Consider the thermal performance and package type for heat dissipation needs. Verify that the dual-channel architecture fits the board space constraints compared to discrete single-channel alternatives.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family from onsemi (formerly Fairchild Semiconductor). It represents a continuation of legacy Fairchild designs now managed by onsemi. The FDS8949 series is known for its balance of low RDS(on) and fast switching speeds, making it suitable for modern power management ICs and motor drivers.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible replacements within the onsemi portfolio such as other FDS89xx variants. Verify equivalent rDS(on) and gate charge specifications. Ensure any substitute maintains AEC-Q101 qualification if used in automotive contexts. Consult distributor cross-reference tools for updated availability.

FDS8949-F085FDS8949-F085
$1.33
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