FET, MOSFET Arrays FDS8949 product image

FDS8949

$1.47
  • Description:MOSFET 2N-CH 40V 6A 8SOIC
  • Series:PowerTrench®

SKU:597c03ce0f41 Category: Brand:

  
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FDS8949 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 40V 6A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS8949

  • Description:MOSFET 2N-CH 40V 6A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:6A
  • Rds On (Max) @ Id, Vgs:29mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:955pF @ 20V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS8949

FDS8949

FET, MOSFET Arrays Overview

The FDS8949 is a dual N-channel PowerTrench MOSFET array manufactured by onsemi. It features a 40V drain-to-source voltage rating and supports a continuous drain current of 6A at 25°C. The device utilizes an 8-SOIC surface-mount package with a width of 3.90mm. Key electrical characteristics include a maximum on-resistance of 29mΩ at 10V gate drive, a gate charge of 11nC at 5V, and input capacitance of 955pF at 20V. It operates within a junction temperature range of -55°C to 150°C and dissipates up to 2W of power.

FET, MOSFET Arrays Feature Summary

  • Dual N-Channel Configuration
  • Logic Level Gate Drive
  • Surface Mount Packaging

FET, MOSFET Arrays Applications

  • DC-DC Power Conversion
  • Load Switching
  • Motor Control Circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix (TR, CT, or DKR) against the required packaging format before purchase. Confirm that the active part status aligns with long-term production requirements. Ensure the 8-SOIC footprint matches the design layout constraints. Check for any recent product change notices regarding wafer fab sites or assembly origins to maintain supply chain consistency.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching applications. The 40V rating provides sufficient headroom for 12V or 24V systems. The logic level gate characteristic allows direct interfacing with standard digital logic outputs without additional driver stages. Evaluate thermal management needs based on the 2W power dissipation limit in the SOIC package.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench series from onsemi, designed for efficient power switching. It serves as a discrete alternative to integrated power modules in space-constrained designs. The dual configuration reduces board area compared to using two separate single MOSFETs. It is part of the broader FDS89 family of dual MOSFET arrays.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available.

FDS8949FDS8949
$1.47
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