FET, MOSFET Arrays FDS8958A product image

FDS8958A

$0.84
  • Description:MOSFET N/P-CH 30V 7A/5A 8SOIC
  • Series:PowerTrench®

SKU:3738bfc201d8 Category: Brand:

  
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FDS8958A is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 30V 7A/5A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS8958A

  • Description:MOSFET N/P-CH 30V 7A/5A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:7A, 5A
  • Rds On (Max) @ Id, Vgs:28mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:575pF @ 15V
  • Power - Max:900mW
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS8958A

FDS8958A

FET, MOSFET Arrays Overview

The FDS8958A is a dual complementary N- and P-channel enhancement mode MOSFET manufactured by onsemi. It integrates two independent transistors within a single SOIC-8 surface-mount package. The N-channel device supports a drain-source voltage of 30 V with a continuous drain current of 7 A at 25°C, while the P-channel counterpart provides 30 V breakdown and 5 A continuous current. Both channels exhibit low on-resistance, specified at 28 mΩ for the N-channel and 52 mΩ for the P-channel at VGS = 10 V. The component operates across a temperature range of -55°C to +150°C junction temperature with a power dissipation rating of 2 W.

FET, MOSFET Arrays Feature Summary

  • Dual complementary configuration integrating N-channel and P-channel enhancement mode transistors in a single package
  • Low on-resistance characteristics optimized for efficient power switching applications
  • Surface-mount SOIC-8 packaging designed for automated assembly processes

FET, MOSFET Arrays Applications

  • DC/DC converter synchronous rectification stages
  • Motor control bridge circuits
  • Power management load switches

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels as the part status is listed as obsolete. Confirm datasheet revisions match design requirements since manufacturing has ceased. Check for moisture sensitivity level compliance during storage and handling procedures before soldering.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require integrated complementary switching pairs. Ensure thermal management strategies accommodate the 2 W power dissipation limit in the SOIC-8 package. Verify gate drive voltages align with the specified threshold and maximum ratings for reliable operation.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench MOSFET family from onsemi, representing legacy silicon technology. It serves as a direct replacement for earlier Fairchild Semiconductor versions of the same part number. The component was widely used in consumer electronics and industrial power supplies before discontinuation.

FET, MOSFET Arrays Replacement Considerations

Consider the FDS8958B as a functional alternative within the same series offering similar voltage ratings but different current capabilities. Evaluate other dual complementary MOSFETs from various manufacturers if pin-compatible substitutes are required for ongoing production.

FDS8958AFDS8958A
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