FDS8958B

FET, MOSFET Arrays Overview

The FDS8958B is a dual N- and P-channel enhancement mode MOSFET manufactured by onsemi using the PowerTrench process. It features a SOIC-8 surface-mount package with a drain-source breakdown voltage (Vds) of 30 V. The continuous drain current (Id) is rated at 6.4 A. On-resistance (Rds(on)) values are 26 mΩ for the N-channel and 51 mΩ for the P-channel. Gate-source voltage (Vgs) limits range from -25 V to +25 V, with threshold voltages between 1 V and 3 V. Total gate charge (Qg) is 12 nC for the N-channel and 19 nC for the P-channel. Switching times include rise/fall times of 2 ns/6 ns. Power dissipation (Pd) is 1.6 W, operating temperature spans -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel and P-Channel configuration in a single package
• PowerTrench technology for minimized on-resistance
• Enhancement mode operation for low-voltage applications

FET, MOSFET Arrays Applications

• Low voltage battery-powered systems
• Applications requiring fast switching speeds
• Line-level low power loss circuits

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official material composition declarations. Check current lifecycle status as end-of-life indicators suggest potential discontinuation. Validate package integrity upon receipt. Ensure storage conditions meet specified temperature ranges before installation.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring complementary N-P channel pairs in compact SOIC-8 footprints. Consider the 30 V rating and 6.4 A current capability for low-side and high-side switching tasks. Evaluate thermal management needs given the 1.6 W power dissipation limit. Compare gate charge specifications against driver capabilities to ensure adequate switching performance within system constraints.

FET, MOSFET Arrays Part Context

This device belongs to the FDS8958 series, which includes variants like the FDS8958A. Both share similar dual-channel architectures but differ in specific electrical parameters such as current ratings and on-resistance values. The FDS8958B offers higher current capacity compared to some siblings while maintaining the same physical footprint and general application scope within onsemi's PowerTrench portfolio.

FET, MOSFET Arrays Replacement Considerations

The FDS8958A is a related variant within the same series. Verify parameter compatibility regarding current ratings and on-resistance before substitution. Ensure pinout alignment remains identical across both components to maintain PCB layout validity without redesign.