FET, MOSFET Arrays FDS8960C product image

FDS8960C

$1.21
  • Description:MOSFET N/P-CH 35V 7A/5A 8SOIC
  • Series:PowerTrench®

SKU:1e1a11dc7b4b Category: Brand:

  
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FDS8960C is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 35V 7A/5A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS8960C

  • Description:MOSFET N/P-CH 35V 7A/5A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):35V
  • Current - Continuous Drain (Id) @ 25°C:7A, 5A
  • Rds On (Max) @ Id, Vgs:24mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:570pF @ 15V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS8960C

FDS8960C

FET, MOSFET Arrays Overview

The FDS8960C is a dual N- and P-channel enhancement mode power MOSFET manufactured using the PowerTrench process. It integrates an N-channel transistor (Q1) rated at 35V and 7A with a maximum on-resistance of 24mΩ at VGS=10V, and a P-channel transistor (Q2) rated at -35V and -5A with a maximum on-resistance of 53mΩ at VGS=-10V. The device operates within a junction temperature range of -55°C to +150°C and features fast switching characteristics suitable for low-voltage applications.

FET, MOSFET Arrays Feature Summary

  • Dual configuration combining N-channel and P-channel transistors in a single package
  • PowerTrench technology designed to minimize on-state resistance while maintaining superior switching performance
  • Fast switching speed capabilities for efficient operation

FET, MOSFET Arrays Applications

  • Low voltage battery powered applications
  • Applications requiring low in-line power loss
  • Fast switching circuit implementations

FET, MOSFET Arrays Procurement Notes

Verify the exact part number before ordering, as Fairchild Semiconductor part numbers containing underscores may have been converted to dashes to meet ON Semiconductor system requirements. Confirm current availability status through official channels, as product lifecycles and distribution rights may have changed following the integration. Always consult the most recent datasheet for updated ordering information.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual solution for both N-channel and P-channel switching is required in low voltage environments. Ensure the application stays within the 35V drain-source voltage limits and 7A continuous current ratings. Verify thermal management requirements against the specified junction-to-ambient thermal resistance values for the chosen PCB pad configuration.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family of MOSFETs originally developed by Fairchild Semiconductor. Following the acquisition, ON Semiconductor manages the product line, potentially updating nomenclature standards. The device represents a legacy design optimized for cost-effective dual-channel switching in portable and low-power electronics.

FET, MOSFET Arrays Replacement Considerations

Check for updated part numbers with dash characters instead of underscores due to ON Semiconductor naming conventions. Verify if newer revisions of the FDS8960 series offer improved electrical parameters or packaging options compatible with existing footprints.

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