FDS9933A

FET, MOSFET Arrays Overview

The FDS9933A is a dual P-channel PowerTrench MOSFET from onsemi, housed in an 8-SOIC surface-mount package. It features a drain-source voltage (Vds) of -20 V and a continuous drain current (Id) of -3.8 A. The device exhibits a maximum on-resistance (Rds(on)) of 75 mΩ at Vgs = -4.5 V. Key electrical parameters include a gate charge (Qg) of 10 nC typical at Vgs = -10 V, a threshold voltage (Vgs(th)) range of -0.6 V to -1.4 V, and a total power dissipation (Pd) of 900 mW. Operating temperatures span from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-Channel Configuration: Integrates two independent P-channel MOSFETs within a single compact package for space-efficient circuit design.
• PowerTrench Technology: Utilizes advanced trench gate architecture to achieve low on-resistance and optimized switching performance.
• Enhanced Thermal Performance: Designed with a leaded SOIC package to facilitate efficient heat dissipation and reliable operation under thermal stress.

FET, MOSFET Arrays Applications

• Low-side load switches in portable consumer electronics
• Battery protection circuits in mobile devices
• DC/DC converter input/output stages
• General-purpose power switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and tape/reel quantity requirements against your manufacturing needs. Confirm that the component status aligns with production timelines, as availability may vary. Ensure compatibility with standard reflow soldering profiles for the 8-SOIC package. Cross-reference the manufacturer's latest datasheet for any updates to mechanical dimensions or electrical characteristics prior to finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select the FDS9933A when a dual P-channel configuration is required in a small footprint. Consider its 75 mΩ Rds(on) for efficiency in low-voltage, moderate-current applications. Evaluate the 900 mW power dissipation limit against thermal management constraints. Compare gate charge specifications for switching speed requirements relative to alternative dual MOSFET options in the same package family.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's PowerTrench series, known for high-performance N- and P-channel MOSFETs. The FDS9933A specifically addresses the need for integrated dual-channel solutions in space-constrained designs. It represents a transition from discrete components to multi-FET arrays, offering improved board space utilization and consistent electrical matching between channels.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other dual P-channel MOSFETs in 8-SOIC packages with similar voltage and current ratings, such as the FDS9933B if higher current capability is needed. Verify pinout compatibility and thermal resistance values before substitution. Check for updated revisions in the PowerTrench lineup that may offer improved Rds(on) or switching speeds.