FDS9933BZ

FET, MOSFET Arrays Overview

The FDS9933BZ is a dual P-Channel MOSFET manufactured by Fairchild Semiconductor, utilizing PowerTrench technology. It features a -20V drain-to-source voltage and a continuous drain current of -4.9A at 25°C. The device achieves a maximum on-resistance of 46mΩ at VGS = -4.5V and 69mΩ at VGS = -2.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SO-8 package.

FET, MOSFET Arrays Feature Summary

• Dual-channel configuration with independent gate control for each channel
• PowerTrench process designed for low on-state resistance and fast switching performance
• High electrostatic discharge protection exceeding 3kV via Human Body Model testing

FET, MOSFET Arrays Applications

• Battery charging circuits
• Load switching applications
• Portable electronics power management

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entities like onsemi. Confirm the specific suffix BZ indicates the SO-8 tape and reel packaging format containing 2500 units per reel. Ensure compliance with RoHS standards before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring dual P-Channel MOSFETs with low gate charge and high efficiency. Evaluate thermal constraints carefully, as the SO-8 package has a thermal resistance of 78°C/W on standard FR-4 boards. Ensure the operating voltage does not exceed the -20V rating.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of MOSFETs developed by Fairchild Semiconductor. It represents a specialized design optimized for portable electronics where space and power efficiency are critical. The dual-channel architecture allows for compact circuit designs compared to using discrete single-channel devices.

FET, MOSFET Arrays Replacement Considerations

Check for equivalents from other manufacturers offering similar dual P-Channel specifications. Verify that any replacement maintains the same SO-8 footprint and electrical characteristics, particularly the on-resistance and breakdown voltage ratings.

FET, MOSFET Arrays FAQ

What is the typical gate charge for the FDS9933BZ?

The typical total gate charge (Qg) is 11nC when tested at VDD = -10V, ID = -4.9A, and VGS = -4.5V.

How is the FDS9933BZ packaged?

The device is supplied in an SO-8 surface-mount package, typically provided in reels of 2500 units.

What is the reverse recovery time of the body diode?

The reverse recovery time (trr) is specified between 46ns and 74ns under test conditions of IF = -4.9A and di/dt = 100A/µs.