FET, MOSFET Arrays FDS9958-F085 product image

FDS9958-F085

$1.45
  • Description:MOSFET 2P-CH 60V 2.9A 8SOIC
  • Series:PowerTrench®

SKU:5096196813d3 Category: Brand:

  
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FDS9958-F085 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 60V 2.9A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS9958-F085

  • Description:MOSFET 2P-CH 60V 2.9A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:2.9A
  • Rds On (Max) @ Id, Vgs:105mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1020pF @ 30V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for FDS9958-F085

FDS9958-F085

FET, MOSFET Arrays Overview

The FDS9958-F085 is a dual P-Channel PowerTrench MOSFET featuring a -60V drain-source voltage and a continuous drain current of -2.9A at 25°C. It utilizes an advanced PowerTrench process to achieve low on-state resistance, specified as a maximum of 105mΩ at VGS = -10V and ID = -2.9A. The device operates within a junction temperature range of -55°C to +150°C and includes AEC-Q101 qualification for automotive reliability.

FET, MOSFET Arrays Feature Summary

  • Dual configuration with two independent P-channel elements in a single SO-8 package
  • Logic level gate drive capability optimized for low voltage control applications
  • Enhanced avalanche energy rating for robustness against inductive switching transients

FET, MOSFET Arrays Applications

  • Load switching circuits
  • Power management systems
  • Battery charging and protection circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix F085 to confirm the SO-8 tape and reel packaging format containing 2500 units per 330mm reel. Ensure that the component meets RoHS compliance standards and holds AEC-Q101 certification if required for automotive-grade deployment.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual P-channel solution is needed for portable electronics. Evaluate the thermal resistance parameters relative to the PCB copper pad area to ensure adequate heat dissipation for the intended duty cycle and ambient operating conditions.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family from onsemi, designed to minimize on-state resistance while maintaining low gate charge. The FDS9958 variant specifically integrates two channels into one package to save board space compared to using discrete single-channel devices.

FET, MOSFET Arrays Replacement Considerations

The datasheet references the related part number FDS9958A, which features a dual N-channel and P-channel configuration. Verify pinout compatibility and electrical specifications before substituting with other dual MOSFETs.

FET, MOSFET Arrays FAQ

What is the maximum single pulse avalanche energy rating?

The device is rated for a single pulse avalanche energy of 54 mJ under specified test conditions.

How does the on-resistance vary with gate voltage?

The maximum rDS(on) is 105mΩ at VGS = -10V, increasing to a maximum of 135mΩ at VGS = -4.5V.

Is this component suitable for automotive applications?

Yes, the FDS9958-F085 is qualified to the AEC-Q101 standard for automotive electronic components.

FDS9958-F085FDS9958-F085
$1.45
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