FDS9958

FET, MOSFET Arrays Overview

The FDS9958 is a dual N- and P-channel MOSFET from onsemi's PowerTrench family, housed in an SOIC-8 surface-mount package. It features a 30V drain-source breakdown voltage with continuous current ratings of 6.4A for the N-channel and 7A for the P-channel. The device offers low on-resistance values of 26mΩ and 51mΩ respectively at Vgs=10V. Operating within a temperature range of -55°C to +150°C junction temperature, it provides efficient switching capabilities suitable for various power management applications.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating both N-channel and P-channel transistors into a single compact package
• Low on-resistance characteristics optimized for high-efficiency power switching operations
• Enhanced thermal performance supporting reliable operation across extended industrial temperature ranges

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification stages
• Load switch implementations requiring complementary channel control
• Motor driver output stages for bidirectional current flow

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels only. Confirm RoHS compliance status via official manufacturer documentation before integration. Check for obsolescence notices as availability may be restricted. Ensure storage conditions maintain moisture sensitivity levels according to datasheet specifications during handling and assembly processes.

FET, MOSFET Arrays Selection Notes

Evaluate thermal dissipation requirements against the specified power dissipation limits under expected operating loads. Compare gate charge parameters with driver capabilities to ensure adequate switching speeds. Verify voltage headroom margins relative to the 30V breakdown rating for system safety. Consider package thermal resistance when designing PCB copper pour areas for effective heat spreading.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's PowerTrench series, designed for general-purpose power switching applications. The dual-channel architecture simplifies circuit design by reducing component count compared to discrete solutions. It serves as a standard solution for low-voltage power management tasks where space constraints and efficiency are critical design factors.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible alternatives include the FDS8958B and FDS8958A. Verify specific parameter differences such as on-resistance and current ratings before substitution. Ensure replacement parts meet identical package dimensions and thermal characteristics for seamless board integration.