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FDSS2407_SB82086 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.
The FDSS2407 is a P-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. It features a shielded gate structure designed for charge balance and low figure of merit (FOM). The device integrates a soft body diode to facilitate synchronous rectification in AC/DC power supplies without requiring external snubber circuits or higher voltage ratings. Key electrical characteristics include a drain-source breakdown voltage of -30V, a continuous drain current of -15A at 25°C case temperature, and a maximum on-resistance of 16mΩ at Vgs = -10V. The component utilizes a TSOT-23-6 surface-mount package.
Verify the specific suffix SB82086 against official Fairchild documentation to confirm tape-and-reel specifications and lot traceability requirements. Ensure the source document explicitly links this suffix to the standard FDSS2407 electrical parameters. Confirm RoHS compliance status and manufacturing origin details directly from the supplier's certified datasheet before finalizing procurement orders.
Select this component for designs requiring a compact P-Channel MOSFET with integrated soft-body diode capabilities. The TSOT-23-6 package suits space-constrained PCB layouts. Verify thermal dissipation requirements against the 15A continuous current rating at specified case temperatures. Ensure gate drive voltages align with the 10V threshold for optimal Rds(on) performance.
The FDSS2407 belongs to the Fairchild PowerTrench series of P-Channel MOSFETs. This family is engineered for power switching applications where efficiency and density are critical. The technology combines advanced silicon processes with shielded gate structures to minimize losses. These devices are commonly utilized in consumer electronics and industrial power systems.
No, the device features a soft body diode that allows it to operate effectively without external snubber circuits or the use of higher-rated MOSFETs.
The maximum drain-source breakdown voltage (BVdss) is rated at -30V.
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