FET, MOSFET Arrays FDSS2407_SB82086 product image

FDSS2407_SB82086

$0.62
  • Description:MOSFET N-CH
  • Series:*

SKU:78484aa2e5a0 Category: Brand:

  
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FDSS2407_SB82086 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDSS2407_SB82086

  • Description:MOSFET N-CH
  • Series:*
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • Technology:-
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDSS2407_SB82086

FDSS2407_SB82086

FET, MOSFET Arrays Overview

The FDSS2407 is a P-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. It features a shielded gate structure designed for charge balance and low figure of merit (FOM). The device integrates a soft body diode to facilitate synchronous rectification in AC/DC power supplies without requiring external snubber circuits or higher voltage ratings. Key electrical characteristics include a drain-source breakdown voltage of -30V, a continuous drain current of -15A at 25°C case temperature, and a maximum on-resistance of 16mΩ at Vgs = -10V. The component utilizes a TSOT-23-6 surface-mount package.

FET, MOSFET Arrays Feature Summary

  • Shielded gate architecture providing optimized charge balance and reduced figure of merit compared to previous generations.
  • Soft body diode performance that eliminates the need for external snubber circuits or replacement with higher-rated devices.
  • Low gate charge and reverse recovery charge properties enabling efficient switching in high-frequency applications.

FET, MOSFET Arrays Applications

  • Synchronous rectification in AC/DC power supply designs
  • High-efficiency DC/DC converter circuits
  • Power management modules requiring compact surface-mount solutions

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix SB82086 against official Fairchild documentation to confirm tape-and-reel specifications and lot traceability requirements. Ensure the source document explicitly links this suffix to the standard FDSS2407 electrical parameters. Confirm RoHS compliance status and manufacturing origin details directly from the supplier's certified datasheet before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a compact P-Channel MOSFET with integrated soft-body diode capabilities. The TSOT-23-6 package suits space-constrained PCB layouts. Verify thermal dissipation requirements against the 15A continuous current rating at specified case temperatures. Ensure gate drive voltages align with the 10V threshold for optimal Rds(on) performance.

FET, MOSFET Arrays Part Context

The FDSS2407 belongs to the Fairchild PowerTrench series of P-Channel MOSFETs. This family is engineered for power switching applications where efficiency and density are critical. The technology combines advanced silicon processes with shielded gate structures to minimize losses. These devices are commonly utilized in consumer electronics and industrial power systems.

FET, MOSFET Arrays FAQ

Does the FDSS2407 require an external snubber circuit?

No, the device features a soft body diode that allows it to operate effectively without external snubber circuits or the use of higher-rated MOSFETs.

What is the maximum drain-source voltage rating?

The maximum drain-source breakdown voltage (BVdss) is rated at -30V.

FDSS2407_SB82086FDSS2407_SB82086
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