FDV303N

$0.29

Description：MOSFET N-CH 25V 680MA SOT23
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f470f4d52cb3 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FDV303N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 25V 680MA SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDV303N

Description：MOSFET N-CH 25V 680MA SOT23
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.7V, 4.5V
Rds On (Max) @ Id, Vgs：450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2.3 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 155°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for FDV303N

FDV303N

Single FETs, MOSFETs Overview

The FDV303N is an N-Channel enhancement mode Digital FET manufactured by onsemi using high cell density DMOS technology. It features a 25 V drain-source voltage rating and supports 0.68 A continuous drain current with a 2 A peak capability. The device offers low on-state resistance of 0.45 Ω at VGS = 4.5 V and 0.6 Ω at VGS = 2.7 V, enabling efficient operation in low-voltage battery circuits. Packaged in a compact SOT-23 surface-mount format, it includes built-in ESD protection rated at 6 kV via the Human Body Model.

Single FETs, MOSFETs Feature Summary

Optimized for direct operation in 3 V circuits due to very low gate drive requirements
High-density DMOS process tailored to minimize on-state resistance at low gate voltages
Integrated electrostatic discharge protection rated at 6 kV under the Human Body Model

Single FETs, MOSFETs Applications

Battery-powered circuits utilizing lithium or cadmium/NMH cells
Inverter applications in portable electronic devices
High-efficiency miniature discrete DC/DC conversion modules

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance and Pb-free status as specified in the datasheet. Ensure proper handling procedures are followed given the 6 kV HBM ESD rating. Validate package markings against the provided diagram to confirm part identity before integration into designs.

Single FETs, MOSFETs Selection Notes

Select this component when designing low-voltage systems requiring minimal gate drive power. The low threshold voltage allows compatibility with logic-level signals from microcontrollers. Consider thermal constraints based on the junction-to-ambient resistance value when determining heat dissipation needs in enclosed spaces.

Single FETs, MOSFETs Part Context

This device belongs to the UniFET series of digital FETs designed for space-constrained portable electronics. It replaces traditional discrete switching solutions by integrating necessary characteristics into a single small-outline package. The technology focuses on reducing conduction losses while maintaining robust switching performance.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other N-channel MOSFETs within the same voltage and current ratings featuring SOT-23 packaging. Verify pinout compatibility and electrical parameters such as RDS(ON) and VGS(th) before substitution.