FDW2501N

Description：MOSFET 2N-CH 20V 6A 8TSSOP
Series：PowerTrench®

SKU:2faa228a8ae9 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

FDW2501N is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 6A 8TSSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDW2501N

Description：MOSFET 2N-CH 20V 6A 8TSSOP
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：6A
Rds On (Max) @ Id, Vgs：18mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1290pF @ 10V
Power - Max：600mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDW2501N

FDW2501N

FET, MOSFET Arrays Overview

The FDW2501N is a dual N-channel enhancement mode MOSFET utilizing PowerTrench technology. It features a TSSOP-8 package with two independent channels. The device supports a drain-source voltage of 20 V and continuous drain current of 6 A per channel. Static on-resistance is specified at 18 mΩ maximum at VGS = 4.5 V and 29 mΩ maximum at VGS = 2.5 V. Gate-source voltage rating is ±12 V. Total gate charge is typically 17 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration in a low-profile TSSOP-8 package
Optimized for power management applications with wide gate drive range
High-performance trench technology for extremely low on-resistance

FET, MOSFET Arrays Applications

Load switch
Motor drive
DC/DC conversion
Power management

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm the datasheet revision matches the specific production lot requirements. Ensure the ordering suffix corresponds to the desired tape and reel quantity. Check for RoHS compliance documentation if required by the target assembly process.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with low on-resistance is needed for compact designs. The 2.5V specified threshold makes it suitable for battery-powered systems. Verify that the thermal resistance characteristics align with the PCB copper pad design for adequate heat dissipation during operation.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of MOSFETs developed by Fairchild Semiconductor. Following corporate acquisitions, the product line is now managed under onsemi. The FDW2501N represents an evolution in low-voltage power switching solutions designed for efficiency and reliability in portable electronics.