FDW2506P

FET, MOSFET Arrays Overview

The FDW2506P is a dual P-Channel PowerTrench MOSFET in an 8-pin TSSOP package. It features a –20 V drain-source voltage and a continuous drain current of –5.3 A. The device specifies an on-resistance of 0.022 Ω at VGS = –4.5 V and 0.033 Ω at VGS = –2.5 V. Total gate charge is typically 21 nC at VGS = –4.5 V. Operating junction temperature ranges from -55 °C to +150 °C, with a maximum power dissipation of 1.0 W.

FET, MOSFET Arrays Feature Summary

• Dual-channel configuration within a low-profile TSSOP-8 package
• Optimized for wide gate drive voltage range (2.5V to 12V)
• Extended ±12V gate-source voltage rating suitable for battery applications

FET, MOSFET Arrays Applications

• Load switch
• Motor drive
• DC/DC conversion
• Power management

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully, as Fairchild Semiconductor was acquired by onsemi. Confirm that the specific ordering suffix matches the required tape and reel quantity of 2500 units. Ensure the component marking reads '2506P' to match the Rev. C datasheet specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual P-Channel solution is required for low-voltage systems. The specified RDS(ON) values at both 2.5V and 4.5V gate drives make it suitable for logic-level control interfaces. Verify thermal constraints, as the TSSOP-8 package has a high junction-to-ambient thermal resistance.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family, utilizing advanced trench technology to achieve extremely low on-resistance. It serves as a rugged gate version designed specifically for power management applications requiring efficient switching performance in small surface-mount packages.

FET, MOSFET Arrays Replacement Considerations

Check for direct equivalents such as the FDC6330P or similar dual P-Channel MOSFETs in TSSOP-8. Ensure replacement parts maintain the same –20 V rating and compatible pinout configuration.