FDW2507NZ

FET, MOSFET Arrays Overview

The FDW2507NZ is a monolithic common drain N-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor, now part of onsemi. It utilizes an advanced trench process to optimize RDS(ON) at VGS = 2.5V and features all drains connected to one side of the TSSOP-8 package. Key electrical parameters include a maximum Drain-Source Voltage (VDSS) of 20 V and a continuous Drain Current (ID) of 7.5 A. The static Drain-Source On-Resistance is specified as 19 mΩ max at VGS = 4.5 V and 23 mΩ max at VGS = 2.5 V. Thermal resistance (RθJA) ranges from 77 °C/W to 114 °C/W depending on copper pad size.

FET, MOSFET Arrays Feature Summary

• Advanced PowerTrench technology for extremely low RDS(ON) at VGS = 2.5 V
• Isolated source and drain pins with all drains on one side of the package
• Low profile TSSOP-8 lead frame package
• Integrated ESD protection diode between gate and source

FET, MOSFET Arrays Applications

• Li-Ion Battery Pack management systems
• Portable devices requiring low voltage switching
• Systems needing isolated source and drain connections

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation carefully, as Fairchild Semiconductor was acquired by onsemi. Confirm that the ordering suffix matches the specific reel size and tape width requirements for your assembly line. Ensure the component marking aligns with the device code listed in the official datasheet to prevent counterfeit risks.

FET, MOSFET Arrays Selection Notes

Select this component when a low-voltage N-Channel MOSFET with optimized performance at VGS = 2.5 V is required. The TSSOP-8 package suits space-constrained designs. Verify thermal constraints against the junction-to-ambient resistance values provided for different copper pad configurations to ensure safe operating area compliance.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family of MOSFETs designed for high efficiency. The FDW2507NZ specifically targets applications where low gate drive voltages are prevalent. Its construction allows for efficient heat dissipation through the exposed drain pads, making it suitable for dense PCB layouts.

FET, MOSFET Arrays Replacement Considerations

Check for updated part numbers under the onsemi portfolio due to corporate acquisition. Verify pinout compatibility and electrical specifications if substituting with other N-Channel MOSFETs in the same voltage and current class.