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FDW2510NZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET 2N-CH 20V 6.4A 8TSSOP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDW2510NZ
- Description：MOSFET 2N-CH 20V 6.4A 8TSSOP
- Series：PowerTrench®
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6.4A
- Rds On (Max) @ Id, Vgs：24mOhm @ 6.4A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：870pF @ 10V
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDW2510NZ
FET, MOSFET Arrays Overview
The FDW2510NZ is a dual N-channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. It features a 20V drain-source voltage (Vdss) and is specified for gate drive voltages ranging from 2.5V to 12V. The device utilizes advanced trench technology to achieve low on-resistance, with Rds(on) values of 0.018Ω at Vgs=4.5V and 0.028Ω at Vgs=2.5V. It is housed in a low-profile TSSOP-8 surface-mount package.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration within a single compact package
- Optimized for wide gate drive voltage range from 2.5V to 12V
- Low profile TSSOP-8 surface mount packaging
FET, MOSFET Arrays Applications
- Load switch circuits
- Motor drive systems
- DC/DC conversion modules
- Power management applications
FET, MOSFET Arrays Procurement Notes
Verify the manufacturer datasheet for the specific electrical characteristics and thermal limits of the FDW2510NZ. Confirm that the TSSOP-8 package dimensions match the target PCB footprint requirements. Ensure the selected component meets all necessary environmental compliance standards required for the final assembly process.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel solution is required with low on-resistance at reduced gate drive voltages. The 2.5V specification makes it suitable for battery-powered systems where gate drive levels may be limited. Consider the thermal performance of the TSSOP-8 package for the expected current load.
FET, MOSFET Arrays Part Context
This part belongs to the PowerTrench series from Fairchild Semiconductor, designed for power management applications. It represents an evolution in trench MOSFET technology aimed at reducing conduction losses while maintaining ruggedness. The dual configuration allows for space-saving designs in portable electronics and motor control applications.
FET, MOSFET Arrays Replacement Considerations
Check for direct replacements such as the FDW2501N or FDW2501NZ, which share similar dual N-channel specifications and PowerTrench technology. Verify pin compatibility and electrical parameters before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
