FET, MOSFET Arrays FDW2511NZ product image

FDW2511NZ

  • Description:MOSFET 2N-CH 20V 7.1A 8TSSOP
  • Series:PowerTrench®

SKU:f98392f8c432 Category: Brand:

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FDW2511NZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 7.1A 8TSSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDW2511NZ

  • Description:MOSFET 2N-CH 20V 7.1A 8TSSOP
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:7.1A
  • Rds On (Max) @ Id, Vgs:20mOhm @ 7.1A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:17.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1000pF @ 10V
  • Power - Max:1.6W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDW2511NZ

FDW2511NZ

FET, MOSFET Arrays Overview

The FDW2511NZ is a dual N-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. It features a low-profile TSSOP-8 package and an extended gate-to-source voltage range of ±12 V, making it suitable for battery applications. The device provides a continuous drain current of 7.1 A at TC = 25°C with a maximum on-resistance of 0.020 Ω at VGS = 4.5 V and 0.025 Ω at VGS = 2.5 V. Key electrical parameters include a drain-to-source breakdown voltage of 20 V, a total gate charge of 11.5 nC (typical) at 4.5 V, and a junction-to-ambient thermal resistance of 77 °C/W on a 1-inch² copper pad.

FET, MOSFET Arrays Feature Summary

  • Dual N-Channel configuration utilizing advanced PowerTrench technology for minimized on-state resistance and low gate charge.
  • Extended gate-to-source voltage rating of ±12 V specifically designed to support battery application requirements.
  • Low profile TSSOP-8 package optimized for space-constrained portable electronics designs.

FET, MOSFET Arrays Applications

  • Load switch circuits
  • Battery charge management systems
  • Battery disconnect protection circuits

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as this component was originally produced by Fairchild Semiconductor prior to its acquisition by onsemi. Confirm that the datasheet revision matches Rev. A1 specifications. Ensure the ordering suffix NZ corresponds to the required tape and reel quantity of 2500 units in a 12 mm width. Validate compliance with applicable environmental standards before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when designing portable electronics requiring dual independent N-channel switching within a compact footprint. The specific 2.5V specified on-resistance makes it appropriate for low-voltage logic control interfaces. Evaluate the 77 °C/W thermal resistance against your PCB copper area constraints to ensure adequate heat dissipation during continuous operation at rated currents.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family of power MOSFETs developed by Fairchild Semiconductor. It represents a specialized dual-channel variant tailored for portable consumer electronics where board space is limited. The product line emphasizes high performance trench technology to achieve superior switching characteristics while maintaining low conduction losses in mobile power management applications.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Single-channel equivalents require circuit topology adjustments. Verify pinout compatibility if replacing with other TSSOP-8 dual MOSFETs to prevent source-drain misalignment.

FDW2511NZFDW2511NZ

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