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FDW2511NZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 7.1A 8TSSOP. Review the specifications below when checking this part for your BOM.
The FDW2511NZ is a dual N-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. It features a low-profile TSSOP-8 package and an extended gate-to-source voltage range of ±12 V, making it suitable for battery applications. The device provides a continuous drain current of 7.1 A at TC = 25°C with a maximum on-resistance of 0.020 Ω at VGS = 4.5 V and 0.025 Ω at VGS = 2.5 V. Key electrical parameters include a drain-to-source breakdown voltage of 20 V, a total gate charge of 11.5 nC (typical) at 4.5 V, and a junction-to-ambient thermal resistance of 77 °C/W on a 1-inch² copper pad.
Verify the manufacturer origin as this component was originally produced by Fairchild Semiconductor prior to its acquisition by onsemi. Confirm that the datasheet revision matches Rev. A1 specifications. Ensure the ordering suffix NZ corresponds to the required tape and reel quantity of 2500 units in a 12 mm width. Validate compliance with applicable environmental standards before finalizing procurement orders.
Select this component when designing portable electronics requiring dual independent N-channel switching within a compact footprint. The specific 2.5V specified on-resistance makes it appropriate for low-voltage logic control interfaces. Evaluate the 77 °C/W thermal resistance against your PCB copper area constraints to ensure adequate heat dissipation during continuous operation at rated currents.
This device belongs to the PowerTrench family of power MOSFETs developed by Fairchild Semiconductor. It represents a specialized dual-channel variant tailored for portable consumer electronics where board space is limited. The product line emphasizes high performance trench technology to achieve superior switching characteristics while maintaining low conduction losses in mobile power management applications.
Consult official cross-reference lists for verified substitutes. Single-channel equivalents require circuit topology adjustments. Verify pinout compatibility if replacing with other TSSOP-8 dual MOSFETs to prevent source-drain misalignment.
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