FDW2512NZ

FET, MOSFET Arrays Overview

The FDW2512NZ is a dual N-Channel PowerTrench MOSFET in a TSSOP-8 package. It features a 20V drain-source voltage rating and an extended gate-source voltage range of ±12V. At VGS = 4.5V, the on-resistance (rDS(ON)) is typically 0.017Ω with a maximum of 0.028Ω at ID = 6.0A. At VGS = 2.5V, rDS(ON) is typically 0.022Ω with a maximum of 0.036Ω at ID = 5.3A. The device supports continuous drain currents up to 6.0A at 25°C case temperature. Total gate charge is 8nC typical at 4.5V. Thermal resistance junction-to-ambient is 77°C/W on a 1-inch copper pad.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel configuration utilizing advanced PowerTrench technology for minimized on-state resistance and low gate charge.
• Extended gate-source voltage capability of ±12V designed for battery application protection.
• Integrated HBM ESD protection rated at 3.5kV typical.
• Low profile TSSOP-8 surface mount packaging.

FET, MOSFET Arrays Applications

• Load switch circuits
• Battery charge management
• Battery disconnect circuits

FET, MOSFET Arrays Procurement Notes

Verify the component origin as Fairchild Semiconductor, now part of onsemi, using the provided datasheet revision A1. Confirm the package marking '2512NZ' matches the physical device. Ensure the ordering suffix corresponds to the specified reel size and tape width if purchasing in bulk quantities.

FET, MOSFET Arrays Selection Notes

Select this component for portable electronics requiring low on-resistance at low gate drive voltages. Verify that the required continuous drain current does not exceed 6.0A at 25°C or 3.3A at 100°C case temperature. Ensure the circuit operates within the 20V drain-source and ±12V gate-source absolute maximum ratings.

FET, MOSFET Arrays Part Context

This dual MOSFET belongs to the PowerTrench family, optimized for portable applications. It integrates two independent N-channel devices in a single compact package to save board space. The design prioritizes low conduction losses while maintaining fast switching performance through reduced gate charge characteristics.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are documented in the source material.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is ±12V.

How does the on-resistance vary with gate voltage?

At VGS = 4.5V, rDS(ON) is typically 0.017Ω. At VGS = 2.5V, it increases to typically 0.022Ω.

What is the thermal resistance junction-to-ambient?

It is 77°C/W when mounted on a 1-inch square copper pad on FR-4, and 114°C/W on a minimum copper pad.