FET, MOSFET Arrays FDW2520C product image

FDW2520C

$0.99
  • Description:MOSFET N/P-CH 20V 6A/4.4A 8TSSOP
  • Series:PowerTrench®

SKU:2682260ec23f Category: Brand:

  
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FDW2520C is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 6A/4.4A 8TSSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDW2520C

  • Description:MOSFET N/P-CH 20V 6A/4.4A 8TSSOP
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:6A, 4.4A
  • Rds On (Max) @ Id, Vgs:18mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1325pF @ 10V
  • Power - Max:600mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDW2520C

FDW2520C

FET, MOSFET Arrays Overview

The FDW2520C is a complementary PowerTrench MOSFET array manufactured by onsemi, originally developed by Fairchild Semiconductor. It integrates an N-channel and a P-channel device within a single low-profile TSSOP-8 package. The N-channel transistor (Q1) supports a continuous drain current of 6 A with a maximum drain-source voltage of 20 V and an on-resistance of 18 mΩ at VGS = 4.5 V. The P-channel transistor (Q2) provides a continuous drain current of -4.4 A, maintaining the same 20 V rating and achieving an on-resistance of 35 mΩ at VGS = -4.5 V. The component operates across a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Complementary dual configuration integrating N-channel and P-channel transistors in a compact surface-mount package
  • Advanced PowerTrench trench technology designed to minimize on-state resistance while maintaining low gate charge for efficient switching performance
  • Logic-level gate drive capability optimized for operation with low gate voltages such as 2.5 V and 4.5 V

FET, MOSFET Arrays Applications

  • DC/DC conversion circuits
  • Power management systems
  • Load switch implementations

FET, MOSFET Arrays Procurement Notes

Verify the obsolete status of this component before initiating procurement processes. Confirm availability through authorized distributors or secondary market suppliers. Ensure that any replacement sourcing maintains strict adherence to original electrical specifications and thermal characteristics to guarantee circuit compatibility and reliability.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring matched complementary switching pairs in space-constrained designs. Evaluate the specific on-resistance requirements against available gate drive voltages, particularly noting the performance differences between 2.5 V and 4.5 V logic levels. Consider the thermal resistance characteristics relative to the intended PCB copper pad area for adequate heat dissipation.

FET, MOSFET Arrays Part Context

This device belongs to the FDW25 series of complementary MOSFET arrays produced using Fairchild's PowerTrench process technology. The series focuses on providing high-performance switching solutions in small form factors suitable for portable electronics and power management integrated circuits where board space is limited.

FET, MOSFET Arrays Replacement Considerations

SI6562CDQ-T1-GE3 from Vishay Siliconix is documented as a similar replacement part.

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