FET, MOSFET Arrays FDW2521C product image

FDW2521C

  • Description:MOSFET N/P-CH 20V 5.5A 8TSSOP
  • Series:PowerTrench®

SKU:0fe802559229 Category: Brand:

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FDW2521C is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 5.5A 8TSSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDW2521C

  • Description:MOSFET N/P-CH 20V 5.5A 8TSSOP
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.5A, 3.8A
  • Rds On (Max) @ Id, Vgs:21mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1082pF @ 10V
  • Power - Max:600mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDW2521C

FDW2521C

FET, MOSFET Arrays Overview

The FDW2521C is a complementary PowerTrench MOSFET device manufactured by onsemi, formerly Fairchild Semiconductor. It integrates an N-channel and P-channel MOSFET in a single low-profile TSSOP-8 package. The N-channel Q1 provides a continuous drain current of 5.5 A with a maximum RDS(on) of 35 mΩ at VGS = 2.5 V. The P-channel Q2 offers a continuous drain current of -3.8 A with a maximum RDS(on) of 70 mΩ at VGS = -2.5 V. Both devices feature a 20 V Drain-Source Voltage rating and operate within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Complementary configuration integrating N-channel and P-channel MOSFETs for space-saving designs
  • PowerTrench technology optimized for extremely low on-state resistance and superior switching performance
  • Logic-level gate drive capability supporting low voltage control applications

FET, MOSFET Arrays Applications

  • DC/DC conversion circuits
  • Power management systems
  • Load switch implementations

FET, MOSFET Arrays Procurement Notes

Verify the manufacturing source carefully as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm the specific revision level (e.g., Rev D1(W)) matches design requirements. Ensure the supplier is an authorized distributor to guarantee authenticity and traceability, as counterfeit parts pose significant risks to circuit reliability.

FET, MOSFET Arrays Selection Notes

Select this component when a compact solution requiring both high-side and low-side switching is needed in a single footprint. The low-profile TSSOP-8 package is suitable for applications with strict height constraints. Evaluate thermal performance based on the specific PCB copper pad area, as thermal resistance varies significantly between minimum and 1-inch square pads.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family of complementary MOSFETs designed for efficient power switching. It serves as a direct replacement for other complementary MOSFET pairs in similar packages, such as the FDW2520C, offering integrated N-channel and P-channel functionality in a standardized surface-mount form factor.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FDW2521CFDW2521C

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