FDW9926NZ

FET, MOSFET Arrays Overview

The FDW9926NZ is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It features a TSSOP-8 surface-mount package and operates with a drain-source voltage of 20 V and a continuous drain current of 4.5 A. The device exhibits a maximum on-resistance of 27 mΩ at specified gate voltages. Electrical characteristics include a rise time of 8 ns, a fall time of 4 ns, and a typical turn-off delay of 14 ns. The component supports an operating temperature range from -55°C to +150°C and has a power dissipation rating of 1 W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact TSSOP-8 package
• Enhancement mode operation optimized for low-voltage applications
• High forward transconductance supporting efficient switching performance

FET, MOSFET Arrays Applications

• Low-voltage DC/DC converter circuits
• Power management modules requiring dual channel control
• Battery protection and load switching systems

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation carefully, as this specific part number is associated with onsemi rather than Fairchild Semiconductor. Confirm the exact suffix requirements for your supply chain needs. Check current availability status as distribution channels may vary. Ensure compatibility with existing design specifications before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel switching in a small footprint. Evaluate thermal management capabilities given the 1 W power dissipation limit in the TSSOP-8 package. Compare on-resistance values against system efficiency targets. Verify that the 20 V breakdown voltage aligns with the intended circuit voltage levels.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench MOSFET family, known for low on-resistance and fast switching speeds. The dual configuration allows for synchronized control in bridge or high-side/low-side driver applications. The technology utilizes silicon planar stripe architecture for improved performance density compared to older generation discrete transistors.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with FDS9926A only if pinout and electrical parameters match exactly. Verify package compatibility and thermal characteristics when considering alternative sources.