FDY1002PZ-G

FET, MOSFET Arrays Overview

The FDY1002PZ-G is a dual P-channel isolated enhancement-mode MOSFET from the PowerTrench series by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 830 mA. The device utilizes an SC-89 surface-mount package with six pins, measuring 1.7 mm in length and 0.6 mm in height. Key electrical parameters include a maximum drain-source resistance of 1.8 Ω, a typical gate charge of 2.2 nC at specified conditions, and a forward voltage of -1 V. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625 mW.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration providing two isolated channels within a single compact package.
• Enhancement-mode operation optimized for low-voltage switching applications.
• PowerTrench technology designed for efficient performance in surface-mount environments.

FET, MOSFET Arrays Applications

• Low-side switching in portable electronic devices
• Battery protection circuits requiring isolation
• General-purpose signal switching in consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact binning or tape-and-reel specifications. Confirm availability status directly with authorized distributors as supply levels fluctuate. Ensure the component meets required RoHS compliance standards for your target market. Cross-reference the datasheet revision date to ensure compatibility with current design specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in a minimal footprint. The 20 V rating suits low-voltage logic interfaces. Verify that the 830 mA current capacity meets load requirements. Consider the SC-89 package dimensions for PCB layout constraints. Ensure thermal management supports the 625 mW dissipation limit under operating conditions.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family of MOSFETs, which focuses on low-resistance and fast-switching capabilities. The FDY1002PZ variant specifically addresses the need for dual-channel isolation in space-constrained designs. It complements single-channel offerings by providing two independent P-channel switches in one package.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult onsemi technical support for verified equivalents. Ensure any replacement matches the SC-89 package outline and pin configuration. Verify that electrical parameters such as Vds and Id remain compatible with the original design requirements.