FDY3001NZ

FET, MOSFET Arrays Overview

The FDY3001NZ is a dual N-channel MOSFET utilizing PowerTrench technology, optimized for low on-resistance at VGS = 2.5V. It features a 20V drain-source voltage rating and a continuous drain current of 200mA. The device offers an RDS(on) of 5 Ohms at VGS = 4.5V and 7 Ohms at VGS = 2.5V. Operating within a junction temperature range of -55°C to +150°C, it includes ESD protection diodes between gate and source. Packaged in SC-89-6 (SOT-363), the component supports surface mount installation with a power dissipation of 625mW.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration designed for space-constrained applications
• PowerTrench process optimization for enhanced performance at low gate voltages
• Integrated ESD protection diodes connected between gate and source terminals

FET, MOSFET Arrays Applications

• Li-Ion Battery Pack management systems
• Low voltage switching circuits requiring 2.5V drive compatibility
• Portable electronic devices with limited power budgets

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and check for obsolete product notices, as this specific part number may be discontinued by Fairchild Semiconductor. Ensure ordering suffixes match required packaging quantities and reel specifications before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET is required with specific optimization for 2.5V gate drive levels. Consider the 5 Ohm RDS(on) at 4.5V and 7 Ohm at 2.5V for efficiency calculations. Verify that the 200mA continuous current rating meets load requirements and that the SC-89-6 package fits the PCB layout constraints.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family of MOSFETs developed by Fairchild Semiconductor. It represents a specialized design focusing on low-voltage operation efficiency. The dual configuration allows for independent control of two channels within a single compact footprint, suitable for bridge drivers or parallel switching applications.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the datasheet indicates the product is obsolete, verify pinout compatibility and electrical parameters carefully if sourcing from secondary markets or evaluating alternative dual N-channel MOSFETs with similar RDS(on) characteristics.