ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
FDY4000CZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 0.6A SOT563F. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDY4000CZ
- Description：MOSFET N/P-CH 20V 0.6A SOT563F
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：600mA, 350mA
- Rds On (Max) @ Id, Vgs：700mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：60pF @ 10V
- Power - Max：446mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563F
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDY4000CZ
FET, MOSFET Arrays Overview
The FDY4000CZ is a discontinued complementary N and P-Channel PowerTrench MOSFET manufactured by onsemi. It integrates an N-channel device (Q1) with a maximum drain current of 600 mA and a P-channel device (Q2) rated for -350 mA continuous drain current. Both transistors feature a Drain-to-Source voltage rating of ±20 V. The component utilizes SC89-6 packaging, which corresponds to the SOT-363 form factor. Electrical characteristics specify a maximum rDS(on) of 0.7 Ω for the N-channel at VGS = 4.5V and 1.2 Ω for the P-channel at VGS = -4.5V. The unit supports an operating junction temperature range from -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Complementary N and P-Channel configuration in a single package
- Optimized low on-resistance utilizing PowerTrench process technology
- Integrated ESD protection diode between gate and source
FET, MOSFET Arrays Applications
- Level shifting circuits
- Power supply converter circuits
- Load and power switching applications
FET, MOSFET Arrays Procurement Notes
This component is officially classified as Discontinued and is not recommended for new designs. Buyers must contact an onsemi representative directly for further information regarding availability or lifecycle status. Standard distribution channels do not support this part number for new procurement orders.
FET, MOSFET Arrays Selection Notes
Designers should verify that the ±20 V Drain-to-Source voltage rating meets system requirements. The integrated ESD protection diode serves only for protection against electrostatic discharge events and does not imply a specific gate overvoltage rating. All operating parameters must be validated by customer technical experts for specific application conditions.
FET, MOSFET Arrays Part Context
Originally developed by Fairchild Semiconductor, this part was integrated into the onsemi portfolio following corporate acquisition. The datasheet reflects the transition period where Fairchild nomenclature was maintained before full migration to onsemi product management systems.
FET, MOSFET Arrays Replacement Considerations
No public confirmed substitute part numbers are documented in the official datasheet. Users are advised to consult onsemi representatives for alternative components suitable for replacement.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
