FDY4001CZ

FET, MOSFET Arrays Overview

The FDY4001CZ is a complementary N and P-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. It integrates an N-channel device (Q1) and a P-channel device (Q2) in a single SC89-6 package. The N-channel unit features a maximum on-resistance of 5Ω at VGS = 4.5V and 7Ω at VGS = 2.5V, with a drain current rating of 200mA. The P-channel unit offers a maximum on-resistance of 8Ω at VGS = -4.5V and 12Ω at VGS = -2.5V, supporting a drain current of -150mA. Both devices operate within a drain-source voltage range of ±20V and support junction temperatures from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Complementary N and P-channel configuration in a compact SC89-6 surface-mount package
• Optimized low on-resistance performance at gate voltages as low as 1.8V
• Integrated ESD protection diode between gate and source terminals

FET, MOSFET Arrays Applications

• Level shifting circuits
• Power supply converter circuits
• Load and power switching for cell phones and pagers

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor, which has undergone corporate restructuring. Confirm that the specific batch meets RoHS compliance standards. Ensure the SC89-6 package dimensions align with the target PCB footprint requirements before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when a matched complementary pair is required for low-voltage logic level applications. The device is suitable for systems operating with gate drive voltages down to 1.8V. Verify that the continuous drain current requirements do not exceed 200mA for the N-channel or 150mA for the P-channel under the intended thermal conditions.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench MOSFET family, designed using advanced trench technology to minimize on-resistance. It serves as a dual-transistor solution for space-constrained designs requiring both N-type and P-type switching capabilities within a single integrated circuit package.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.