FDZ1323NZ

FET, MOSFET Arrays Overview

The FDZ1323NZ is a single N-channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in a WLCSP-6 package. It features a 20 V drain-source breakdown voltage and supports a continuous drain current of 10 A. The device exhibits a maximum on-resistance of 13 mΩ at room temperature, with a typical gate charge of 17 nC. Electrical characteristics include a gate threshold voltage ranging from 900 mV to 1.5 V and a forward transconductance minimum of 9 S. The component operates within a junction temperature range of -55 °C to +150 °C and dissipates up to 2 W of power.

FET, MOSFET Arrays Feature Summary

• PowerTrench technology optimized for low on-resistance and fast switching performance
• WLCSP-6 surface-mount package designed for minimal footprint requirements
• Enhanced thermal stability supporting high-temperature operation up to 150 °C

FET, MOSFET Arrays Applications

• Portable electronics battery protection circuits
• Low-voltage DC-DC converter output stages
• Load switching applications in mobile devices

FET, MOSFET Arrays Procurement Notes

Verify the NRND (Not Recommended for New Designs) status before initiating new projects. Confirm RoHS compliance details through official datasheets. Ensure supply chain sources provide authentic onsemi components to avoid counterfeit risks. Check for any recent process change notifications that may affect long-term availability or specifications.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring compact packaging and efficient power handling in low-voltage environments. Compare the 13 mΩ on-resistance against system loss requirements. Evaluate the 10 A current rating against peak load demands. Consider the WLCSP-6 form factor for space-constrained PCB layouts.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family of silicon MOSFETs. The series focuses on delivering high performance in small packages. The FDZ1323NZ specifically targets applications needing reliable switching in limited board space. It represents a standard solution for low-side switching in consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative vendors by matching electrical parameters such as Rds(on), Vgs(th), and package dimensions.