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FEPB16DTHE3_A/P is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 200V 8A TO263AB. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for FEPB16DTHE3_A/P
- Description：DIODE ARRAY GP 200V 8A TO263AB
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：8A
- Voltage - Forward (Vf) (Max) @ If：950 mV @ 8 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：35 ns
- Current - Reverse Leakage @ Vr：10 µA @ 200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AB (D2PAK)
- Grade：Automotive
- Qualification：AEC-Q101
Diode Arrays datasheet and documents for FEPB16DTHE3_A/P
Diode Arrays Overview
The FEPB16DTHE3_A/P is a dual common-cathode ultrafast plastic rectifier manufactured by Vishay General Semiconductor. It features a glass passivated pellet chip junction and is housed in a D2PAK (TO-263AB) package. The device provides a maximum repetitive peak reverse voltage of 200 V and supports a maximum average forward rectified current of 16 A, distributed as 8.0 A per diode. Key electrical characteristics include a maximum instantaneous forward voltage of 1.50 V at 8.0 A, a typical reverse recovery time of 50 ns, and a peak forward surge current capability of 125 A.
Diode Arrays Feature Summary
- Ultrafast recovery time with low switching losses for high efficiency
- Glass passivated pellet chip junction construction
- High forward surge current capability
- Meets MSL level 1 requirements
Diode Arrays Applications
- High frequency rectifiers in switching mode power supplies
- Inverters
- Freewheeling diodes
- DC/DC converters
- Other power switching applications
Diode Arrays Procurement Notes
Verify the specific ordering code against the manufacturer's documentation to ensure correct suffix alignment. Confirm that the component meets the required environmental standards and qualification levels for the intended application before procurement.
Diode Arrays Selection Notes
Select this component for designs requiring dual common-cathode configurations with fast recovery characteristics. Ensure thermal management accounts for the junction-to-case thermal resistance and derating curves provided in the datasheet to maintain reliability under load.
Diode Arrays Part Context
This part belongs to the FEP16xT and FEPB16xT series of dual common-cathode ultrafast plastic rectifiers from Vishay General Semiconductor. The series offers various voltage ratings ranging from 50 V to 600 V, packaged in TO-220AB or D2PAK formats.
Diode Arrays Replacement Considerations
FEPB16JT-M3/I
Diode Arrays FAQ
What is the maximum repetitive peak reverse voltage for the FEPB16D variant?
The maximum repetitive peak reverse voltage (VRRM) for the FEPB16D variant is 200 V.
Does the FEPB16DTHE3_A/P meet automotive qualification standards?
The standard commercial grade does not inherently meet AEC-Q101; however, Vishay offers an AEC-Q101 qualified version with the HM3 suffix.
What is the typical reverse recovery time for this device?
The typical maximum reverse recovery time (trr) per diode is 50 ns.
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