FF06030Q

Single FETs, MOSFETs Overview

The FF06030Q is a Silicon Carbide (SiC) MOSFET from the Falcon Series by Fast SiC Semiconductor Inc., housed in a TO-247-4L package. It features a Drain-Source Voltage (VDS) of 650 V and a maximum On-State Resistance (RDS(on)) of 30 mΩ at VGS=18V and Tj=25°C. The device supports a Continuous Drain Current (ID) of 65 A at TC=25°C and a Pulse Drain Current of 176 A. Key electrical parameters include a Gate Charge (QG) of 125 nC, Output Capacitive Charge (Qoss) of 102 nC, and Power Dissipation (Ptot) of 202 W at TC=25°C. The junction temperature range is -55 to 175 °C.

Single FETs, MOSFETs Feature Summary

• Clean Kelvin-source switching pin-out for optimized gate drive performance
• High avalanche endurance capability for robust operation
• Optimized RDS(on) with rapid switching behavior
• Compatible with standard gate drivers

Single FETs, MOSFETs Applications

• Switching Mode Power Supply
• PFC & DC/DC Converter
• EV Charging Station
• UPS
• Renewable Energy
• Power Inverter & Motor Driver

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'Q' corresponds to the TO-247-4L package configuration as documented in the datasheet part number table. Confirm that the component meets RoHS compliance and halogen-free requirements before integration. Ensure the application environment remains within the specified junction temperature limits (-55 to 175 °C) and thermal impedance constraints to maintain rated performance.

Single FETs, MOSFETs Selection Notes

Select this component for high-power density applications requiring low on-state resistance and fast switching speeds. The TO-247-4L package provides an additional Kelvin source pin, which facilitates cleaner switching and reduces Miller effect interference compared to 3-terminal variants. Consider the 650V rating and 30mΩ resistance for efficient power conversion in electric vehicle and renewable energy systems.

Single FETs, MOSFETs Part Context

This device belongs to the Falcon Series of Silicon Carbide MOSFETs manufactured by Fast SiC Semiconductor Inc. The series is designed to enable high-frequency operation and compact system designs. The FF06030Q specifically utilizes the TO-247-4L package variant, distinguishing it from the TO-247-3L version (FF06030E-3) by providing a dedicated Kelvin source terminal for improved gate control.

Single FETs, MOSFETs Replacement Considerations

The datasheet references the FF06030E-3 as a comparable product featuring a TO-247-3L package. No other specific substitute part numbers are publicly confirmed in the provided documentation.