FF06060E-3A

Single FETs, MOSFETs Overview

The FF06060E-3A is a Silicon Carbide (SiC) MOSFET from the Falcon series by fastSiC, housed in a TO-247-3L package. It features a drain-source voltage of 700V and a maximum on-state resistance of 80 mΩ at 15A and 175°C. The device supports a continuous drain current of 43A and a pulse current of 117A, with a power dissipation rating of 202W. Key electrical parameters include a gate charge of 69 nC and an avalanche energy capability of 500 mJ. Operating temperatures range from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• Optimized on-resistance combined with rapid switching behavior for high efficiency.
• Clean Kelvin-source pin-out configuration available in the 4L variant.
• Validated based on AEC-Q101 automotive qualification standards.
• High avalanche endurance capability supporting robust operation.

Single FETs, MOSFETs Applications

• Switching mode power supplies
• Power factor correction and DC/DC converters
• Electric vehicle charging stations
• Uninterruptible power supplies
• Renewable energy systems
• Power inverters and motor drivers

Single FETs, MOSFETs Procurement Notes

Verify the specific package type required, as the datasheet lists both TO-247-3L and TO-247-4L variants under the same product family. Confirm that the selected component meets the necessary thermal management requirements for the intended application, considering the specified junction temperature limits and power dissipation ratings provided in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-frequency operation and compact system designs due to its optimized switching characteristics. Ensure compatibility with standard gate drivers, as the device is designed for such integration. Consider the thermal impedance values when designing heat sinks, particularly for environments approaching the maximum operating temperature of 175°C.

Single FETs, MOSFETs Part Context

This part belongs to the Falcon series of Silicon Carbide MOSFETs manufactured by fastSiC Semiconductor Inc. The series is engineered to enable high-temperature applications and allow for high-frequency operation, facilitating the realization of compact and lightweight power electronic systems compared to traditional silicon alternatives.

Single FETs, MOSFETs Replacement Considerations

For comparable products or alternative sourcing options, contact Fast SiC Semiconductor Inc. directly via their official website. No specific substitute part numbers are listed in the public datasheet; therefore, direct consultation with the manufacturer is recommended for cross-referencing equivalent components.

Single FETs, MOSFETs FAQ

What is the difference between the TO-247-3L and TO-247-4L packages?

The TO-247-4L package includes a dedicated Kelvin source pin for clean switching and provides 8mm of creepage distance between the drain and source, whereas the TO-247-3L does not feature these specific attributes.

Is this component suitable for automotive applications?

Yes, the device has been validated based on AEC-Q101 automotive qualification standards, indicating its suitability for automotive electronics contexts.