SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
FF06060J-7A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists fastSiC. Its product description is SICFET N-CH 650V 44A TO-263-7L. Review the specifications below when checking this part for your BOM.
The FF06060J-7A is a Silicon Carbide (SiC) MOSFET from the Falcon Series by fastSiC, housed in a TO-263-7L package. It features a drain-source voltage of 650V and a maximum on-state resistance of 84mΩ at 175°C. The device supports a continuous drain current of 44A and a pulse current of 120A, with power dissipation rated at 214W. Key electrical parameters include a total gate charge of 69nC and an avalanche energy capability of 500mJ. Operating temperatures range from -55°C to 175°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package type and marking. Confirm that the component meets all required automotive qualification standards if intended for such applications. Review the preliminary datasheet revision date to ensure access to the most recent technical specifications and pad layout updates before finalizing procurement.
Select this component for designs requiring high power density and high-frequency operation. The low gate charge facilitates efficient driving, while the wide operating temperature range supports demanding thermal environments. Ensure the PCB layout accommodates the TO-263-7L footprint and utilizes the Kelvin source pin for optimal switching performance.
This part belongs to the Falcon Series of SiC MOSFETs manufactured by fastSiC Semiconductor Inc. The series includes variants with different packages, such as TO-220-3L and TOLL, sharing similar electrical characteristics. The FF06060J-7A specifically denotes the TO-263-7L surface-mount configuration within this product line.
Consult the manufacturer's website or contact sales representatives directly for information on comparable products or direct substitutes. Cross-reference key parameters like RDS(on), VDS, and package dimensions when evaluating alternatives.
The recommended gate-source turn-on voltage (VGS) is between 15V and 18V.
Yes, the device is designed to enable high-temperature applications with a junction temperature range up to 175°C.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.