Single FETs, MOSFETs FF06320B product image

FF06320B

$2.16
  • Description:SICFET N-CH 650V 8.6A PQFN5x6
  • Series:Falcon
  • Mfr:fastSiC
  • Package:Tape & Reel (TR)

SKU:dd8c464e519f Category: Brand:

  
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FF06320B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists fastSiC. Its product description is SICFET N-CH 650V 8.6A PQFN5x6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FF06320B

  • Description:SICFET N-CH 650V 8.6A PQFN5x6
  • Series:Falcon
  • Mfr:fastSiC
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:8.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):15V, 18V
  • Rds On (Max) @ Id, Vgs:420mOhm @ 2A, 18V
  • Vgs(th) (Max) @ Id:1.6V @ 4mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs:14.5 nC @ 400 V
  • Vgs (Max):+18V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds:318 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):41W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-PQFN (5x6), Power56
  • Package / Case:9-PowerTDFN

Single FETs, MOSFETs datasheet and documents for FF06320B

FF06320B

Single FETs, MOSFETs Overview

The FF06320B is a Silicon Carbide MOSFET from the Falcon Series by Fast SiC Semiconductor Inc., housed in a PQFN 5 x 6 surface-mount package. It features a drain-source breakdown voltage of 650V and a typical on-state resistance of 320mΩ at 25°C. The device supports a continuous drain current of 8.6A at 25°C case temperature and handles a pulse drain current of 37A. Key electrical parameters include a total gate charge of 14.5nC, an output capacitive charge of 12.7nC, and a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

  • Optimized on-state resistance combined with rapid switching behavior for high efficiency
  • Low profile packaging designed to minimize parasitic inductance
  • High avalanche endurance capability for robust operation
  • Compatible with standard gate drivers for simplified integration

Single FETs, MOSFETs Applications

  • Switching mode power supplies
  • Power factor correction circuits
  • Telecom power systems
  • Renewable energy inverters
  • Class D amplifiers

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant against project requirements, as the FF06320 series includes both TO-252 (FF06320A) and PQFN 5x6 (FF06320B) options. Confirm that the datasheet revision matches the design timeline, noting the document is marked Preliminary. Ensure thermal management designs account for the specified junction-to-case thermal impedance and derating curves provided in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-frequency operation and compact system designs due to its low parasitic inductance packaging. Consider the 650V rating and 320mΩ resistance for balancing conduction losses and switching performance. Evaluate the thermal characteristics against the expected operating environment, particularly noting the continuous current derating at elevated case temperatures up to 175°C.

Single FETs, MOSFETs Part Context

This part belongs to the Falcon Series of Silicon Carbide MOSFETs manufactured by Fast SiC Semiconductor Inc. The series aims to enable high power density and lightweight systems through optimized RDS(on) and switching characteristics. The FF06320B specifically utilizes the PQFN 5 x 6 package, distinguishing it from the TO-252 packaged FF06320A variant within the same product family.

Single FETs, MOSFETs Replacement Considerations

The datasheet references the FF06320A as a comparable product variant differing only in package type (TO-252 vs. PQFN). No other specific substitute part numbers are listed in the provided documentation.

FF06320BFF06320B
$2.16
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