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FF08MR12W1MA1B11ABPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V AG-EASY1BM-2. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF08MR12W1MA1B11ABPSA1
- Description：MOSFET 2N-CH 1200V AG-EASY1BM-2
- Series：CoolSiC™
- Mfr：Infineon Technologies
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：150A (Tj)
- Rds On (Max) @ Id, Vgs：9.8mOhm @ 150A, 15V
- Vgs(th) (Max) @ Id：5.55V @ 90mA
- Gate Charge (Qg) (Max) @ Vgs：450nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：16000pF @ 600V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-EASY1BM-2
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF08MR12W1MA1B11ABPSA1
FET, MOSFET Arrays Overview
The FF08MR12W1MA1B11ABPSA1 is a CoolSiC Automotive MOSFET half-bridge module in the EasyPACK 1B package. It features a 1200 V drain-source voltage and a nominal continuous drain current of 150 A at a heatsink temperature of 65 °C. The typical on-resistance is 9.8 mΩ at 25 °C, rising to 12.1 mΩ at 150 °C. The module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C. It provides 5.1 kV DC insulation for one second and operates within a junction temperature range of -40 °C to 150 °C.
FET, MOSFET Arrays Feature Summary
- Utilizes silicon carbide technology for low switching losses and high blocking voltage
- Integrates an NTC temperature sensor for thermal monitoring
- Employs PressFIT contact technology for signal terminals to avoid selective soldering
- Provides 5.1 kV DC insulation between terminals and heatsink
FET, MOSFET Arrays Applications
- Auxiliary inverters
- DC/DC converters
- (Hybrid) electric vehicles (H)EV
FET, MOSFET Arrays Procurement Notes
Verify component authenticity by checking the Data Matrix barcode against Infineon's official label code format. Confirm that the material number matches the specified part number exactly. Ensure the product meets AQG 324 automotive qualification standards before integration into vehicle systems.
FET, MOSFET Arrays Selection Notes
Select this module for high-voltage applications requiring robust silicon carbide performance. Consider the 150 A nominal current rating relative to the heatsink temperature of 65 °C. Evaluate the 12.1 mΩ maximum on-resistance at 150 °C for thermal management requirements in compact designs.
FET, MOSFET Arrays Part Context
This component belongs to the Automotive CoolSiC EasyPACK 1B family. It combines robust silicon carbide technology with a flexible package designed for hybrid and fuel cell electric vehicles. The module supports easy assembly through mechanical guiding elements and mounting clamps.
FET, MOSFET Arrays Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
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