SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF1000R17IE4BOSA1 is a half-bridge IGBT module from Infineon's Trenchstop IGBT4 - E4 series, housed in the PrimePACK™3 package. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 1000 A at TC = 25°C. The maximum repetitive peak collector current (ICRM) is 2000 A for 1 ms pulses. At Tvj = 25°C, the typical collector-emitter saturation voltage (VCEsat) is 2.00 V, with a maximum of 2.45 V. The total power dissipation (Ptot) is rated at 6.25 kW at TC = 25°C. The module includes an integrated NTC thermistor with a rated resistance (R25) of 5.00 kΩ.
Verify the specific ordering suffix BOSA1 against official documentation to confirm exact manufacturing lot codes or regional compliance variations. Confirm that the PrimePACK3 housing dimensions match the mechanical constraints of the target assembly. Ensure gate drive parameters align with the specified internal gate resistor values for optimal switching performance.
Select this component for high-power industrial applications requiring robust thermal cycling capabilities and extended operating temperatures. Evaluate the thermal resistance characteristics against the system's cooling strategy, considering the copper base plate design. Verify that the 1700 V rating provides sufficient margin for the intended DC bus voltage and transient overvoltage conditions.
This module belongs to the Infineon Trenchstop IGBT4 - E4 product family, designed for high-efficiency power conversion. The PrimePACK3 packaging offers high power density and reliable screw-mount installation. It represents a standard solution for medium to high-power industrial inverter designs where reliability and thermal management are critical.
Public confirmed substitute part numbers: None identified.