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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF1000R17IE4DPB2BOSA1 is a PrimePACK™3 IGBT module featuring Trench/Fieldstop IGBT4 technology and an emitter-controlled diode. It has a collector-emitter voltage (VCES) of 1700 V, a nominal continuous DC collector current (IC nom) of 1000 A at TH = 55°C, and a repetitive peak collector current (ICRM) of 2000 A for 1 ms pulses. The maximum junction temperature under switching conditions is 150°C. Key electrical parameters include a typical VCEsat of 2.00 V at Tvj = 25°C and a gate threshold voltage (VGEth) of 5.80 V. The module includes an integrated NTC thermistor with a rated resistance (R25) of 5.00 kΩ.
Verify the exact ordering suffix against Infineon's official documentation to confirm specific manufacturing lot codes or regional compliance variations. Ensure that any additional characters in the full part number do not alter the core technical specifications or package type defined in the datasheet.
Select this module for high-power applications requiring robust short-circuit tolerance and high current density. Consider the 150°C operating limit and the necessity of managing thermal impedance through proper heatsinking. Verify that the drive circuit can handle the specified gate charge and internal resistance values.
This component belongs to the Infineon Trenchstop IGBT4 family within the PrimePACK™3 series. It utilizes silicon technology designed for industrial and traction power conversion. The module integrates both IGBT switches and anti-parallel diodes in a single screw-mount package.
Consult official cross-reference lists for compatible modules with similar voltage and current ratings. Verify mechanical dimensions and pinout compatibility before substituting.