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Product Detailed Parameters
- Description：IGBT MOD 1200V 150A 780W
- Series：C
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：150 A
- Power - Max：780 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：650 nF @ 25 V
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Overview
The FF100R12KS4 is a 62mm C-Series IGBT module utilizing fast IGBT2 technology for high-frequency switching. It features a half-bridge configuration with an integrated anti-parallel diode. Maximum collector-emitter voltage (VCES) is 1200 V, with a continuous DC collector current (IC nom) of 100 A at TC=80°C and repetitive peak current (ICRM) of 200 A. Collector-emitter saturation voltage (VCEsat) is typically 3.20 V at Tvj=25°C. The module includes an isolated copper base plate, Al2O3 internal insulation, and supports a junction temperature range of -40°C to 125°C.
Feature Summary
- High short-circuit capability with self-limiting short-circuit current
- Low switching losses optimized for high-frequency applications
- Isolated base plate with high creepage and clearance distances
- Positive temperature coefficient for VCEsat
Applications
- High frequency switching applications
- Motor drives and servo drives
- Resonant inverter applications
- UPS systems
- Medical applications
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact mechanical or electrical variants. Confirm RoHS compliance status and production availability through authorized distributors. Ensure application notes regarding mounting torque and thermal interface material are consulted prior to integration.
Selection Notes
Select this module for designs requiring robust performance in high-frequency environments. Evaluate thermal resistance values against the expected heat sink capacity. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Verify gate drive requirements align with the specified internal gate resistor and threshold voltages.
Part Context
This component belongs to the Infineon 62mm C-Series module family, designed specifically for high-frequency switching using IGBT2 technology. It serves as a core power semiconductor device in industrial and medical power conversion systems where compact packaging and high reliability are required.
Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Ensure replacement parts match the 62mm footprint, 1200V rating, and 100A current class. Verify that alternative modules maintain compatible switching characteristics and thermal resistance profiles.
